FJBE2150DTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

5MHz

Collector Emitter Saturation Voltage :

250mV

Number of Pins :

3

Width :

9.85mm

Transistor Application :

SWITCHING

Published :

2015

Operating Temperature :

-55°C~125°C TJ

Max Collector Current :

2A

HTS Code :

8541.29.00.95

Gain Bandwidth Product :

5MHz

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Vce Saturation (Max) @ Ib, Ic :

250mV @ 330mA, 1A

Mount :

Surface Mount

Power - Max :

110W

Polarity/Channel Type :

NPN

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Height :

4.83mm

Terminal Form :

Gull wing

hFE Min :

20

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

800V

Collector Base Voltage (VCBO) :

1.5kV

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

800V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 400mA 3V

Series :

ESBC™

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Length :

10.67mm

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

12V

Current - Collector Cutoff (Max) :

100μA

RoHS Status :

RoHS Compliant

Number of Elements :

1

Packaging :

Tube

Element Configuration :

Single

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Max Power Dissipation :

110W

Weight :

1.88g