ESM2012DV
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- Mfr.Part #
- ESM2012DV
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOTOP
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 120A ISOTOP
- Stock
- 7,040
- In Stock ：
- 7,040
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 100A
- Terminal Finish :
- Nickel (Ni)
- Width :
- 25.4mm
- Mount :
- Chassis Mount, Screw
- Max Power Dissipation :
- 175W
- Collector Emitter Breakdown Voltage :
- 120V
- hFE Min :
- 1200
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Current Rating :
- 120A
- Voltage - Rated DC :
- 120V
- Terminal Form :
- UNSPECIFIED
- Power Dissipation :
- 175W
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- ESM2012
- Max Collector Current :
- 120A
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- NPN
- Radiation Hardening :
- No
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE
- Terminal Position :
- UPPER
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 150V
- VCEsat-Max :
- 2 V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Package / Case :
- ISOTOP
- Pin Count :
- 4
- Packaging :
- Tube
- Mounting Type :
- Chassis Mount
- Fall Time-Max (tf) :
- 300ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1200 @ 100A 5V
- Case Connection :
- Isolated
- Collector Emitter Saturation Voltage :
- 1.5V
- Transistor Type :
- NPN - Darlington
- Datasheets
- ESM2012DV
NPN - Darlington 150°C TJ 1 Elements 4 Terminations SILICON ISOTOP Tube Chassis Mount
ESM2012DV Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1200 @ 100A 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 120A volts.
ESM2012DV Features
the DC current gain for this device is 1200 @ 100A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 100A
the emitter base voltage is kept at 7V
the current rating of this device is 120A
ESM2012DV Applications
There are a lot of STMicroelectronics
ESM2012DV applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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