EMT2DXV6T5

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Mfr.Part #
EMT2DXV6T5
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Stock
96,000
In Stock :
96,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity :
PNP
Surface Mount :
yes
Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Package :
Bulk
Collector Base Voltage (VCBO) :
-50 V
Min Operating Temperature :
-55 °C
Element Configuration :
Dual
Terminal Position :
Dual
Transistor Application :
AMPLIFIER
Emitter Base Voltage (VEBO) :
6 V
Max Power Dissipation :
357 mW
Max Operating Temperature :
150 °C
Collector Emitter Voltage (VCEO) :
-60 V
Max Collector Current :
100 mA
Peak Reflow Temperature (Cel) :
260
hFE Min :
120
Number of Elements :
2
Manufacturer :
Rochester Electronics LLC
Transistor Element Material :
SILICON
DC Current Gain-Min (hFE) :
120
Number of Pins :
6
Pbfree Code :
yes
Product Status :
Active
Terminal Finish :
MATTE TIN
Lead Free :
Lead Free
Configuration :
SEPARATE, 2 ELEMENTS
Collector Current-Max (IC) :
0.1 A
Collector Emitter Saturation Voltage :
-500 mV
Terminal Form :
Flat
JESD-30 Code :
R-PDSO-F6
Polarity/Channel Type :
PNP
Pin Count :
6
Reach Compliance Code :
Unknown
Qualification Status :
COMMERCIAL
Gain Bandwidth Product :
140 MHz
JESD-609 Code :
e3
Manufacturer Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Series :
*
Collector-Emitter Voltage-Max :
60 V
Package Shape :
RECTANGULAR
Number of Terminals :
6
RoHS :
Compliant
Datasheets
EMT2DXV6T5
Introducing Transistors - Bipolar (BJT) - Single onsemi EMT2DXV6T5 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, EMT2DXV6T5 pinout, EMT2DXV6T5 datasheet PDF, EMT2DXV6T5 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi EMT2DXV6T5 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi EMT2DXV6T5


2 Elements SILICON PNP

EMT2DXV6T5 Overview


Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500 mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6 V.In the 60 V setting, the maximum collector-emitter voltage is set.During maximum operation, collector current can be as low as 100 mA volts.

EMT2DXV6T5 Features


a collector emitter saturation voltage of -500 mV
the emitter base voltage is kept at 6 V


EMT2DXV6T5 Applications


There are a lot of onsemi
EMT2DXV6T5 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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