DZT751-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

80V

Max Power Dissipation :

2W

Transition Frequency :

145MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Gain Bandwidth Product :

145MHz

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Number of Pins :

4

Pin Count :

4

Number of Terminations :

4

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Width :

3.5mm

Transistor Element Material :

SILICON

Base Part Number :

DZT751

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Package / Case :

TO-261-4, TO-261AA

Emitter Base Voltage (VEBO) :

-5V

Transistor Type :

PNP

Number of Elements :

1

Collector Emitter Breakdown Voltage :

60V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Max Breakdown Voltage :

60V

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Weight :

7.994566mg

Height :

1.6mm

Max Collector Current :

3A

Power - Max :

1W

Collector Emitter Voltage (VCEO) :

60V

Terminal Position :

Dual

Length :

6.5mm

Power Dissipation :

2W

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

600mV @ 300mA, 3A

Polarity/Channel Type :

PNP

Radiation Hardening :

No

Frequency :

145MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

-600mV

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

18 Weeks