DZT751-13

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Mfr.Part #
DZT751-13
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 3A SOT223-3
Stock
7,090
In Stock :
7,090

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
yes
Element Configuration :
Single
Transition Frequency :
145MHz
Max Collector Current :
3A
Mount :
Surface Mount
Power Dissipation :
2W
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
600mV @ 300mA, 3A
JESD-609 Code :
e3
Pin Count :
4
Transistor Application :
SWITCHING
Power - Max :
1W
Packaging :
Tape and Reel (TR)
Weight :
7.994566mg
Collector Emitter Saturation Voltage :
-600mV
Polarity/Channel Type :
PNP
Width :
3.5mm
Emitter Base Voltage (VEBO) :
-5V
Height :
1.6mm
ECCN Code :
EAR99
Terminal Finish :
Matte Tin (Sn)
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
60V
Base Part Number :
DZT751
Number of Pins :
4
Factory Lead Time :
18 Weeks
Package / Case :
TO-261-4, TO-261AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency :
145MHz
Max Power Dissipation :
2W
Terminal Position :
Dual
Case Connection :
COLLECTOR
Collector Base Voltage (VCBO) :
80V
Radiation Hardening :
No
Length :
6.5mm
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
1
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Voltage (VCEO) :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA 2V
Max Breakdown Voltage :
60V
Gain Bandwidth Product :
145MHz
Number of Terminations :
4
Mounting Type :
Surface Mount
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT751-13 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:DZT751, Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Mounting Type:Surface Mount, DZT751-13 pinout, DZT751-13 datasheet PDF, DZT751-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT751-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DZT751-13


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

DZT751-13 Overview


This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -600mV.A VCE saturation (Max) of 600mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 145MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 3A volts is possible.

DZT751-13 Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 145MHz


DZT751-13 Applications


There are a lot of Diodes Incorporated
DZT751-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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