DXTN5840CFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A, 2V

Package :

Tape and Reel (TR)

Operating Temperature :

-55°C ~ 150°C (TJ)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

DC Current Gain-Min (hFE) :

180

Minimum Operating Temperature :

- 55 C

Collector-Emitter Voltage-Max :

40 V

Vce Saturation (Max) @ Ib, Ic :

350mV @ 30mA, 3A

Supplier Device Package :

U-DFN2020-3 (Type B)

Current - Collector (Ic) (Max) :

5 A

Package / Case :

3-UDFN Exposed Pad

Polarity/Channel Type :

NPN

Power - Max :

690 mW

Surface Mount :

yes

Packaging :

Cut Tape

Series :

-

Transistor Element Material :

SILICON

JESD-30 Code :

S-PDSO-N3

Qualification :

AEC-Q101

Subcategory :

Transistors

Continuous Collector Current :

100

Transistor Polarity :

PNP

RoHS :

Details

MSL :

MSL 1 - Unlimited

Collector Current-Max (IC) :

5 A

Terminal Form :

NO LEAD

Additional Feature :

High Reliability

Transistor Type :

NPN

Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Product Type :

BJTs - Bipolar Transistors

Terminal Position :

Dual

Case Connection :

COLLECTOR

JESD-609 Code :

e4

Power Dissipation :

1.5

Factory Lead Time :

13 Weeks

Power Dissipation-Max (Abs) :

1.25 W

Product Category :

Bipolar Transistors - BJT

Technology :

Si

Reach Compliance Code :

Compliant

Transition Frequency :

320

Brand :

Diodes Incorporated

Collector-Base Capacitance-Max :

70 pF

Manufacturer :

Diodes Incorporated

Current - Collector Cutoff (Max) :

100nA

Package Shape :

Square

Voltage - Collector Emitter Breakdown (Max) :

40 V

Product Status :

Active

Number of Terminals :

3

Frequency - Transition :

150MHz

Mounting Style :

SMD/SMT

Number of Elements :

1

Reference Standard :

AEC-Q101

VCEsat-Max :

0.275 V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount