DXTN58100CFDB-7
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- Mfr.Part #
- DXTN58100CFDB-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- SS LOW SAT TRANSISTOR U-DFN2020-
- Stock
- 2,320
- In Stock ：
- 2,320
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Manufacturer :
- Diodes Incorporated
- Product Status :
- Active
- Package :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA, 2V
- MSL :
- MSL 1 - Unlimited
- Packaging :
- Cut Tape
- Series :
- -
- Transition Frequency :
- 300
- Product Category :
- Bipolar Transistors - BJT
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Continuous Collector Current :
- 100
- Power Dissipation :
- 1.5
- Package / Case :
- 3-UDFN Exposed Pad
- Power - Max :
- 690 mW
- Transistor Type :
- NPN
- Minimum Operating Temperature :
- - 55 C
- Technology :
- Si
- Supplier Device Package :
- U-DFN2020-3 (Type B)
- RoHS :
- Details
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Product Type :
- BJTs - Bipolar Transistors
- Maximum Operating Temperature :
- + 150 C
- Qualification :
- AEC-Q101
- Current - Collector (Ic) (Max) :
- 4 A
- Mounting Type :
- Surface Mount
- Brand :
- Diodes Incorporated
- Frequency - Transition :
- 150MHz
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 4A
- Current - Collector Cutoff (Max) :
- 100nA
- Mounting Style :
- SMD/SMT
- Transistor Polarity :
- NPN
- Subcategory :
- Transistors
- Datasheets
- DXTN58100CFDB-7
NPN -55°C ~ 150°C (TJ) 100nA 3-UDFN Exposed Pad Cut Tape Surface Mount
DXTN58100CFDB-7 Overview
In this device, the DC current gain is 180 @ 500mA, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 260mV @ 400mA, 4A.Maintaining the continuous collector voltage at 100 is essential for high efficiency.300 is present in the transition frequency.Supplier device package U-DFN2020-3 (Type B) comes with the product.The device exhibits a collector-emitter breakdown at 100 V.
DXTN58100CFDB-7 Features
the DC current gain for this device is 180 @ 500mA, 2V
the vce saturation(Max) is 260mV @ 400mA, 4A
a transition frequency of 300
the supplier device package of U-DFN2020-3 (Type B)
DXTN58100CFDB-7 Applications
There are a lot of Diodes Incorporated
DXTN58100CFDB-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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