DXT458P5-13
- Mfr.Part #
- DXT458P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A POWERDI5
- Stock
- 72,933
- In Stock :
- 72,933
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 400V
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 50MHz
- Number of Elements :
- 1
- Number of Pins :
- 3
- Width :
- 5.45mm
- Element Configuration :
- Single
- Published :
- 2016
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.15mm
- Mounting Type :
- Surface Mount
- Max Frequency :
- 50MHz
- Current - Collector (Ic) (Max) :
- 300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 2.8W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 300mA
- Collector Emitter Saturation Voltage :
- 500mV
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 2.8W
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Collector Base Voltage (VCBO) :
- 400V
- Base Part Number :
- DXT458
- Frequency - Transition :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- Power Dissipation :
- 2.8W
- Max Breakdown Voltage :
- 400V
- Supplier Device Package :
- PowerDI™ 5
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 6mA, 50mA
- Length :
- 4.05mm
- Package / Case :
- PowerDI™ 5
- Max Collector Current :
- 300mA
- Weight :
- 95.991485mg
- Collector Emitter Breakdown Voltage :
- 400V
- Manufacturer Package Identifier :
- POWERDI-5
- Datasheets
- DXT458P5-13

NPN -55°C~150°C TJ 100nA 1 Elements PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT458P5-13 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 400V volts is the breakdown voltage.Supplier device package PowerDI™ 5 comes with the product.The device exhibits a collector-emitter breakdown at 400V.Maximum collector currents can be below 300mA volts.
DXT458P5-13 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the supplier device package of PowerDI™ 5
DXT458P5-13 Applications
There are a lot of Diodes Incorporated
DXT458P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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