DSC7102R0L
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- Mfr.Part #
- DSC7102R0L
- Manufacturer
- Panasonic
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A MINIP3
- Stock
- 2,375
- In Stock ：
- 2,375
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-243AA
- Length :
- 4.5mm
- Collector Emitter Saturation Voltage :
- 300mV
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Factory Lead Time :
- 10 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 2V
- Max Frequency :
- 180MHz
- Number of Terminations :
- 3
- Published :
- 2010
- Max Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Flat
- Base Part Number :
- DSC7102
- Height :
- 1.5mm
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Frequency - Transition :
- 180MHz
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 180MHz
- Transistor Type :
- NPN
- Width :
- 2.5mm
- hFE Min :
- 120
- Max Collector Current :
- 1A
- Datasheets
- DSC7102R0L
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
DSC7102R0L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
DSC7102R0L Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
DSC7102R0L Applications
There are a lot of Panasonic Electronic Components
DSC7102R0L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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