DSA7504Q0L
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- Mfr.Part #
- DSA7504Q0L
- Manufacturer
- Panasonic
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 4A MINIP3
- Stock
- 42,182
- In Stock ：
- 42,182
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 10 Weeks
- Collector Base Voltage (VCBO) :
- -30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Frequency - Transition :
- 180MHz
- Package / Case :
- TO-243AA
- Height :
- 1.5mm
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Terminal Form :
- Flat
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -7V
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Length :
- 4.5mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 3A
- Max Breakdown Voltage :
- 20V
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 120
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 1V
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 180MHz
- Max Frequency :
- 180MHz
- Collector Emitter Saturation Voltage :
- -1V
- Width :
- 2.5mm
- Base Part Number :
- DSA7504
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Continuous Collector Current :
- -4A
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2A 2V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Max Collector Current :
- 4A
- Collector Emitter Breakdown Voltage :
- 20V
- Mount :
- Surface Mount
- Datasheets
- DSA7504Q0L
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
DSA7504Q0L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100mA, 3A.Continuous collector voltages of -4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 4A volts.
DSA7504Q0L Features
the DC current gain for this device is 120 @ 2A 2V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at -7V
a transition frequency of 180MHz
DSA7504Q0L Applications
There are a lot of Panasonic Electronic Components
DSA7504Q0L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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