DS3050W-100#

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Mfr.Part #
DS3050W-100#
Manufacturer
Analog Devices, Inc.
Package / Case
256-BGA
Datasheet
Download
Description
IC NVSRAM 4MBIT PARALLEL 256BGA
Stock
30,460
In Stock :
30,460

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Manufacturer :
Analog Devices, Inc.
Product Category :
Memory
Peak Reflow Temperature (Cel) :
245
Mounting Type :
Surface Mount
Memory Width :
8
Supply Voltage-Max (Vsup) :
3.6V
ECCN Code :
3A991.B.2.A
Surface Mount :
yes
Packaging :
Tray
Qualification Status :
Not Qualified
Published :
2006
Time@Peak Reflow Temperature-Max (s) :
30
Organization :
512KX8
Memory Density :
4194304 bit
Terminal Pitch :
1.27mm
Memory Format :
NVSRAM
Memory Type :
Non-Volatile
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-40°C~85°C TA
Memory Size :
4Mb 512K x 8
JESD-609 Code :
e1
Voltage - Supply :
3V~3.6V
Operating Mode :
ASYNCHRONOUS
Number of Terminations :
256
Memory Interface :
Parallel
Access Time (Max) :
100 ns
HTS Code :
8542.32.00.41
Base Part Number :
DS3050W
Height Seated (Max) :
8.72mm
Reach Compliance Code :
not_compliant
Supply Voltage-Min (Vsup) :
3V
Package / Case :
256-BGA
Write Cycle Time - Word, Page :
100ns
Number of Functions :
1
Terminal Position :
BOTTOM
Terminal Finish :
TIN SILVER COPPER
Moisture Sensitivity Level (MSL) :
5 (48 Hours)
Width :
27mm
JESD-30 Code :
S-PBGA-B256
Length :
27mm
Lead Free :
Lead Free
Pin Count :
256
Supply Voltage :
3.3V
Datasheets
DS3050W-100#
Introducing Memory Analog Devices, Inc. DS3050W-100# from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-40°C~85°C TA, Number of Terminations:256, Base Part Number:DS3050W, Package / Case:256-BGA, DS3050W-100# pinout, DS3050W-100# datasheet PDF, DS3050W-100# amp .Beyond Memory Analog Devices, Inc. DS3050W-100# ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Analog Devices, Inc. DS3050W-100#


Memory Analog Devices, Inc. DS3050W-100# Overview

The Memory Analog Devices, Inc. DS3050W-100# is a high-performance, non-volatile SRAM (NVSRAM) with a robust storage capacity of 4 Mbit, integrated in a compact 256-BGA (Ball Grid Array) package. This advanced memory solution ensures data retention while providing fast parallel access, making it an ideal choice for sophisticated electronic systems that require reliable and speedy data storage. Designed to offer both durability and flexibility, the DS3050W-100# features a wide voltage range and is perfectly suited for demanding applications across various industries.

DS3050W-100# Features

This NVSRAM component boasts several key features that enhance its utility and efficiency in complex electronic environments. These include a 4 Mbit capacity, parallel interface for swift data access, and a compact 256-BGA package that ensures a minimal footprint on system boards. The device's high data integrity and power-failure non-volatility safeguard critical data, making it highly reliable in applications where data security is paramount.

DS3050W-100# Applications

  • Data Logging Systems: Utilized for capturing and storing large volumes of data reliably, making it ideal for use in environments such as manufacturing and scientific research where data loss prevention is crucial.
  • Industrial Automation: Serves as a robust memory component in complex automation systems, providing fast access to data that facilitates real-time processing and control.
  • Medical Equipment: Applied in medical devices that require non-volatile memory to store critical patient data and operational parameters securely.
  • Telecommunications: Used in telecommunications equipment for storing configuration data and maintaining system stability even after power outages.
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