DS3050W-100#

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Mfr.Part #
DS3050W-100#
Manufacturer
Analog Devices, Inc.
Package / Case
256-BGA
Datasheet
Download
Description
IC NVSRAM 4MBIT PARALLEL 256BGA
Stock
30,460
In Stock :
30,460

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Manufacturer :
Analog Devices, Inc.
Product Category :
Memory
ECCN Code :
3A991.B.2.A
Mounting Type :
Surface Mount
Packaging :
Tray
Terminal Finish :
TIN SILVER COPPER
Memory Interface :
Parallel
Memory Format :
NVSRAM
Memory Width :
8
Access Time (Max) :
100 ns
Lead Free :
Lead Free
Base Part Number :
DS3050W
Memory Size :
4Mb 512K x 8
Published :
2006
Operating Temperature :
-40°C~85°C TA
JESD-30 Code :
S-PBGA-B256
Length :
27mm
HTS Code :
8542.32.00.41
Organization :
512KX8
Supply Voltage :
3.3V
Operating Mode :
ASYNCHRONOUS
JESD-609 Code :
e1
Supply Voltage-Max (Vsup) :
3.6V
Memory Density :
4194304 bit
Time@Peak Reflow Temperature-Max (s) :
30
Pin Count :
256
Memory Type :
Non-Volatile
Number of Terminations :
256
Moisture Sensitivity Level (MSL) :
5 (48 Hours)
Surface Mount :
yes
Reach Compliance Code :
not_compliant
Write Cycle Time - Word, Page :
100ns
Package / Case :
256-BGA
Height Seated (Max) :
8.72mm
Terminal Position :
BOTTOM
Peak Reflow Temperature (Cel) :
245
Terminal Pitch :
1.27mm
Voltage - Supply :
3V~3.6V
Qualification Status :
Not Qualified
Supply Voltage-Min (Vsup) :
3V
RoHS Status :
ROHS3 Compliant
Number of Functions :
1
Width :
27mm
Introducing Memory Analog Devices, Inc. DS3050W-100# from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:DS3050W, Operating Temperature:-40°C~85°C TA, Number of Terminations:256, Package / Case:256-BGA, DS3050W-100# pinout, DS3050W-100# datasheet PDF, DS3050W-100# amp .Beyond Memory Analog Devices, Inc. DS3050W-100# ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Analog Devices, Inc. DS3050W-100#


Memory Analog Devices, Inc. DS3050W-100# Overview

The Memory Analog Devices, Inc. DS3050W-100# is a high-performance, non-volatile SRAM (NVSRAM) with a robust storage capacity of 4 Mbit, integrated in a compact 256-BGA (Ball Grid Array) package. This advanced memory solution ensures data retention while providing fast parallel access, making it an ideal choice for sophisticated electronic systems that require reliable and speedy data storage. Designed to offer both durability and flexibility, the DS3050W-100# features a wide voltage range and is perfectly suited for demanding applications across various industries.

DS3050W-100# Features

This NVSRAM component boasts several key features that enhance its utility and efficiency in complex electronic environments. These include a 4 Mbit capacity, parallel interface for swift data access, and a compact 256-BGA package that ensures a minimal footprint on system boards. The device's high data integrity and power-failure non-volatility safeguard critical data, making it highly reliable in applications where data security is paramount.

DS3050W-100# Applications

  • Data Logging Systems: Utilized for capturing and storing large volumes of data reliably, making it ideal for use in environments such as manufacturing and scientific research where data loss prevention is crucial.
  • Industrial Automation: Serves as a robust memory component in complex automation systems, providing fast access to data that facilitates real-time processing and control.
  • Medical Equipment: Applied in medical devices that require non-volatile memory to store critical patient data and operational parameters securely.
  • Telecommunications: Used in telecommunications equipment for storing configuration data and maintaining system stability even after power outages.
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