DS2065W-100#
- Mfr.Part #
- DS2065W-100#
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 256-BGA
- Datasheet
- Download
- Description
- IC NVSRAM 8MBIT PARALLEL 256BGA
- Stock
- 35,610
- In Stock :
- 35,610
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Memory
- Write Cycle Time - Word, Page :
- 100ns
- Package / Case :
- 256-BGA
- Number of Terminations :
- 256
- HTS Code :
- 8542.32.00.41
- Qualification Status :
- Not Qualified
- Width :
- 27mm
- Terminal Finish :
- TIN SILVER COPPER
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Memory Type :
- Non-Volatile
- Memory Interface :
- Parallel
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ASYNCHRONOUS
- Supply Voltage-Max (Vsup) :
- 3.6V
- Power Supplies :
- 3.3V
- JESD-30 Code :
- S-PBGA-B256
- Memory Width :
- 8
- Mounting Type :
- Surface Mount
- Access Time (Max) :
- 100 ns
- Supply Voltage-Min (Vsup) :
- 3V
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 256
- Length :
- 27mm
- ECCN Code :
- 3A991.B.2.A
- Base Part Number :
- DS2065
- Voltage - Supply :
- 3V~3.6V
- Supply Voltage :
- 3.3V
- Number of Functions :
- 1
- Operating Temperature :
- -40°C~85°C TA
- Memory Size :
- 8Mb 1M x 8
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Published :
- 2006
- Surface Mount :
- yes
- Terminal Pitch :
- 1.27mm
- Memory Density :
- 8388608 bit
- Packaging :
- Tray
- Organization :
- 1MX8
- Height Seated (Max) :
- 8.72mm
- Memory Format :
- NVSRAM
- Peak Reflow Temperature (Cel) :
- 245
- Supply Current-Max :
- 0.05mA
- Standby Current-Max :
- 0.005A
- Datasheets
- DS2065W-100#

Memory Analog Devices, Inc. DS2065W-100# Overview
Introducing the Memory Analog Devices, Inc. DS2065W-100#, a high-performance integrated circuit featuring non-volatile SRAM (NVSRAM) technology. This advanced memory solution offers a substantial 8Mbit capacity, encapsulated within a compact 256-BGA (Ball Grid Array) package. Engineered by Analog Devices, a leader in semiconductor design, this product stands out for its reliable data retention and swift parallel interface, making it an excellent choice for applications requiring fast access and non-volatile memory storage. Its robust design ensures long-term reliability and performance under a wide range of environmental conditions, making it an ideal selection for critical and high-stakes applications.
DS2065W-100# Features
The DS2065W-100# is equipped with several key features that enhance its usability and efficiency. Its 8Mbit storage capacity ensures ample space for critical data without frequent erasure. The parallel interface facilitates quick data transfer rates, which is essential for performance-critical applications. The 256-BGA packaging not only minimizes space on the circuit board but also enhances the thermal and electrical performance of the device. Furthermore, the reliability of the non-volatile memory guarantees data preservation even in the event of power loss, making it a dependable choice for maintaining essential information.
DS2065W-100# Applications
- Industrial Automation: In automation systems, the DS2065W-100# can manage program data and operation logs, ensuring robust performance and high reliability in process control.
- Telecommunication Equipment: Used in network infrastructure, this NVSRAM ensures quick access to data, supporting high-speed telecommunications operations and system integrity.
- Automotive Electronics: Ideal for use in automotive applications where data integrity and speed are crucial, especially for critical system settings and user preferences.
- Medical Devices: In medical systems, the DS2065W-100# is essential for storing sensitive data reliably, supporting complex functions in critical medical instruments.
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