DS1270Y-100

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Mfr.Part #
DS1270Y-100
Manufacturer
Analog Devices, Inc.
Package / Case
36-DIP Module (0.600, 15.24mm)
Datasheet
Download
Description
IC NVSRAM 16MBIT PARALLEL 36EDIP
Stock
21,725
In Stock :
21,725

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Manufacturer :
Analog Devices, Inc.
Product Category :
Memory
Number of Terminations :
36
Terminal Position :
Dual
HTS Code :
8473.30.11.40
Memory Interface :
Parallel
Voltage - Supply :
4.5V~5.5V
Pin Count :
36
Access Time (Max) :
100 ns
Package / Case :
36-DIP Module (0.600, 15.24mm)
Data Bus Width :
8B
Memory Size :
16Mb 2M x 8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Organization :
2MX8
Lead Free :
Contains Lead
Peak Reflow Temperature (Cel) :
240
Base Part Number :
DS1270Y
Memory Format :
NVSRAM
JESD-609 Code :
e0
Number of Functions :
1
ECCN Code :
3A991.B.2.A
Density :
16 Mb
Additional Feature :
5 YEAR DATA RETENTION
Frequency :
100GHz
Write Cycle Time - Word, Page :
100ns
Operating Temperature :
0°C~70°C TA
Terminal Finish :
TIN LEAD
Published :
2006
Number of Pins :
36
Pbfree Code :
No
Operating Supply Voltage :
5V
Memory Width :
8
Mounting Type :
Through Hole
Radiation Hardening :
No
Supply Voltage :
5V
RoHS Status :
Non-RoHS Compliant
Packaging :
Tube
Memory Type :
Non-Volatile
Surface Mount :
No
Datasheets
DS1270Y-100
Introducing Memory Analog Devices, Inc. DS1270Y-100 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:36, Package / Case:36-DIP Module (0.600, 15.24mm), Base Part Number:DS1270Y, Operating Temperature:0°C~70°C TA, Number of Pins:36, Mounting Type:Through Hole, DS1270Y-100 pinout, DS1270Y-100 datasheet PDF, DS1270Y-100 amp .Beyond Memory Analog Devices, Inc. DS1270Y-100 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Analog Devices, Inc. DS1270Y-100


Memory Analog Devices, Inc. DS1270Y-100 Overview

Introducing the DS1270Y-100, a high-performance Non-Volatile SRAM (NVSRAM) manufactured by Analog Devices, Inc., designed to meet the demands of sophisticated electronic systems requiring reliable and durable memory solutions. This 16Mbit NVSRAM utilizes a parallel interface, encased in a robust 36-pin EDIP package, ensuring easy integration into existing architectures without compromising on space or functionality. The Memory Analog Devices, Inc. DS1270Y-100 is engineered to provide seamless performance, ensuring data integrity even in the event of unexpected power loss, making it an ideal solution for critical data storage applications.

DS1270Y-100 Features

The DS1270Y-100 boasts a wide array of features designed for robustness and reliability. Its large 16Mbit storage capacity is perfect for high-density data applications, while the parallel communication interface facilitates fast and efficient data transfers. The device's durable 36-pin EDIP package is suited for harsh industrial environments, providing enhanced mechanical strength and environmental resilience. Furthermore, its non-volatile nature means that data is retained without the need for a continuous power supply, making it highly reliable in systems where data integrity is paramount.

DS1270Y-100 Applications

  • Data Logging Systems: Ideal for use in environments where data must be preserved across power cycles, such as in data acquisition systems used in scientific and industrial settings.
  • Industrial Automation: Ensures reliable operation in machinery and production line control systems, where durability and data retention are critical for seamless manufacturing processes.
  • Telecommunications: Serves as dependable memory for storing configuration data in communication equipment, ensuring robust performance even in the event of power disruptions.
  • Medical Devices: Provides secure and reliable memory solutions for medical monitoring and diagnostic systems, crucial for maintaining patient data integrity.
  • Aerospace: Suitable for use in various aerospace applications, where the integrity and retention of critical flight data are essential, despite the challenging conditions encountered.
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