DS1258Y-100#
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- Mfr.Part #
- DS1258Y-100#
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 40-DIP Module (0.610, 15.495mm)
- Datasheet
- Download
- Description
- IC NVSRAM 2MBIT PARALLEL 40EDIP
- Stock
- 14,328
- In Stock ：
- 14,328
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Memory
- Density :
- 2 Mb
- Surface Mount :
- No
- Radiation Hardening :
- No
- Memory Type :
- Non-Volatile
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Number of Pins :
- 40
- Operating Temperature :
- 0°C~70°C TA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Pitch :
- 2.54mm
- Number of Terminations :
- 40
- Memory Interface :
- Parallel
- Number of Functions :
- 1
- Voltage - Supply :
- 4.5V~5.5V
- Organization :
- 128KX16
- Data Bus Width :
- 16b
- Additional Feature :
- 10 YEAR DATA RETENTION
- JESD-609 Code :
- e0
- Supply Current-Max :
- 0.17mA
- Published :
- 2006
- Write Cycle Time - Word, Page :
- 100ns
- Power Supplies :
- 5V
- ECCN Code :
- 3A991.B.2.A
- Memory Width :
- 16
- Access Time (Max) :
- 100 ns
- Pin Count :
- 40
- RoHS Status :
- Non-RoHS Compliant
- Operating Supply Voltage :
- 5V
- Lead Free :
- Contains Lead
- Package / Case :
- 40-DIP Module (0.610, 15.495mm)
- HTS Code :
- 8542.32.00.41
- Pbfree Code :
- No
- Terminal Position :
- Dual
- Memory Size :
- 2Mb 128K x 16
- Base Part Number :
- DS1258Y
- Memory Format :
- NVSRAM
- Supply Voltage :
- 5V
- Standby Current-Max :
- 0.01A
- Datasheets
- DS1258Y-100#
Memory Analog Devices, Inc. DS1258Y-100# Overview
The DS1258Y-100# by Analog Devices, Inc. is a high-performance, non-volatile SRAM (NVSRAM) device offering a substantial 2Mbit storage capacity. Engineered for reliability and speed, it integrates seamlessly into a broad range of high-demand applications. Its 40-pin EDIP (Extended Dual In-line Package) ensures robust physical packaging and ease of integration into system designs. This NVSRAM unit is designed to retain data when power is removed, with the aid of an embedded battery. The Memory Analog Devices, Inc. DS1258Y-100# stands out for its combination of durability, data integrity, and low-power consumption, making it an ideal choice for sophisticated electronic systems requiring frequent or rapid access to large volumes of data.
DS1258Y-100# Features
This 2Mbit parallel NVSRAM features several key attributes that make it highly advantageous for use in critical data storage applications. These include an extended temperature range, ensuring operational stability in varying environmental conditions, and a fast access time, facilitating quick data retrieval and storage. The device's robust design includes hardware and software write protection, enhancing security and data integrity. Additionally, its low power consumption during operation makes it an economical choice for energy-efficient designs.
DS1258Y-100# Applications
- Industrial Automation Systems: Integrates into control systems for data logging and real-time critical process monitoring, ensuring data is immediately accessible after power disruptions.
- Telecommunications: Used in network infrastructure to store configuration and state information, allowing quick recovery and initialization upon system reboot or power failure.
- Automotive Electronics: Provides reliable data storage for advanced driver-assistance systems (ADAS), ensuring settings and last-state data are preserved between vehicle startups.
- Medical Equipment: Employs in critical medical monitoring and diagnostic devices, where preservation of operational parameters and patient data is crucial for device reliability and patient safety.
- Military and Aerospace: Suitable for use in systems requiring ruggedized, fail-safe memory storage that can withstand extreme environmental conditions and abrupt power losses.
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