DS1230W-100IND
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- Mfr.Part #
- DS1230W-100IND
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 28-DIP Module (0.600, 15.24mm)
- Datasheet
- Download
- Description
- IC NVSRAM 256KBIT PAR 28EDIP
- Stock
- 13,530
- In Stock ：
- 13,530
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Memory
- Memory Type :
- Non-Volatile
- Terminal Position :
- Dual
- Height Seated (Max) :
- 10.668mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Memory Size :
- 256Kb 32K x 8
- Number of Terminations :
- 28
- Organization :
- 256KX8
- Memory Format :
- NVSRAM
- Pin Count :
- 28
- Supply Voltage-Min (Vsup) :
- 3V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 15.24mm
- ECCN Code :
- EAR99
- Length :
- 38.225mm
- Write Cycle Time - Word, Page :
- 100ns
- Factory Lead Time :
- 6 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Memory Density :
- 2097152 bit
- Operating Temperature :
- -40°C~85°C TA
- Power Supplies :
- 3.3V
- Mounting Type :
- Through Hole
- Additional Feature :
- 10 YEAR DATA RETENTION
- Supply Current-Max :
- 0.05mA
- Terminal Finish :
- MATTE TIN
- HTS Code :
- 8473.30.11.40
- Pbfree Code :
- yes
- Voltage - Supply :
- 3V~3.6V
- Supply Voltage :
- 3.3V
- JESD-30 Code :
- R-PDIP-T28
- Memory Width :
- 8
- Base Part Number :
- DS1230W
- Surface Mount :
- No
- Published :
- 2004
- Supply Voltage-Max (Vsup) :
- 3.6V
- Standby Current-Max :
- 0.00025A
- Terminal Pitch :
- 2.54mm
- Access Time (Max) :
- 100 ns
- Memory Interface :
- Parallel
- Operating Mode :
- ASYNCHRONOUS
- Number of Functions :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Package / Case :
- 28-DIP Module (0.600, 15.24mm)
- Datasheets
- DS1230W-100IND
Memory Analog Devices, Inc. DS1230W-100IND Overview
The DS1230W-100IND by Analog Devices, Inc. is a high-performance Non-Volatile SRAM (NVSRAM) that offers 256 Kbit of memory in a robust 28-pin EDIP package. This product is designed to provide reliable data retention while eliminating the complexities and overhead of battery backup required by traditional SRAMs. It features an integrated lithium battery and control circuit that ensures data is maintained in the absence of power, making it an ideal choice for critical data storage applications where the integrity of the data is paramount. The utilization of advanced technology in the Memory Analog Devices, Inc. DS1230W-100IND ensures lower power consumption and higher reliability, thereby enhancing system performance and reducing the total cost of ownership for businesses.
DS1230W-100IND Features
- 256 Kbit of non-volatile memory
- Parallel interface for fast data access
- Integrated power-fail deselect and battery switch circuitry
- 10-year minimum data retention in the absence of external power
- Operates in industrial temperature ranges (-40°C to +85°C)
- 28-pin EDIP package suitable for PCB mounting
DS1230W-100IND Applications
- Industrial Automation: Utilized in PLCs and control systems to retain critical program and system data during power losses.
- Telecommunications: Ensures data integrity for switching systems and network routers that require high reliability and fast access to backup configuration data.
- Medical Devices: Applied in medical monitoring systems where non-volatile memory is crucial for retaining patient data and device configuration securely.
- Transportation: Used in vehicle navigation and telemetry systems to preserve vital log and positional data in challenging environments.
- Military and Aerospace: Ideal for applications requiring rugged memory solutions that provide data stability and endurance under extreme conditions.
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