DS1225Y-150IND+

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Mfr.Part #
DS1225Y-150IND+
Manufacturer
Analog Devices, Inc.
Package / Case
28-DIP Module (0.600, 15.24mm)
Datasheet
Download
Description
IC NVSRAM 64KBIT PARALLEL 28EDIP
Stock
21,644
In Stock :
21,644

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Manufacturer :
Analog Devices, Inc.
Product Category :
Memory
Supply Voltage-Min (Vsup) :
4.5V
Voltage - Supply :
4.5V~5.5V
Packaging :
Tube
Length :
38.227mm
Operating Mode :
ASYNCHRONOUS
Memory Size :
64Kb 8K x 8
Height Seated (Max) :
10.668mm
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Number of Functions :
1
Memory Type :
Non-Volatile
Reach Compliance Code :
not_compliant
HTS Code :
8473.30.11.40
Supply Voltage :
5V
Factory Lead Time :
11 Weeks
Write Cycle Time - Word, Page :
150ns
Access Time (Max) :
150 ns
Published :
2010
Terminal Pitch :
2.54mm
Package / Case :
28-DIP Module (0.600, 15.24mm)
Surface Mount :
No
Mounting Type :
Through Hole
Operating Temperature :
-40°C~85°C TA
Memory Density :
65536 bit
Width :
15.24mm
Number of Terminations :
28
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supply Voltage-Max (Vsup) :
5.5V
Pin Count :
28
Organization :
8KX8
Memory Interface :
Parallel
Memory Format :
NVSRAM
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Terminal Position :
Dual
Memory Width :
8
JESD-30 Code :
R-XDMA-P28
Additional Feature :
10 YEAR DATA RETENTION
Datasheets
DS1225Y-150IND+
Introducing Memory Analog Devices, Inc. DS1225Y-150IND+ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:28-DIP Module (0.600, 15.24mm), Mounting Type:Through Hole, Operating Temperature:-40°C~85°C TA, Number of Terminations:28, DS1225Y-150IND+ pinout, DS1225Y-150IND+ datasheet PDF, DS1225Y-150IND+ amp .Beyond Memory Analog Devices, Inc. DS1225Y-150IND+ ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Analog Devices, Inc. DS1225Y-150IND+


Memory Analog Devices, Inc. DS1225Y-150IND+ Overview

The DS1225Y-150IND+ by Analog Devices, Inc. is a high-performance Non-Volatile SRAM (NVSRAM) designed to deliver both reliability and versatility across a broad spectrum of applications. This integrated circuit is housed in a 28-pin EDIP package and offers a substantial 64 Kbit of memory. Engineered to retain data without external power, it ensures data preservation even in the event of a system power loss, making it an ideal solution for critical data storage requirements. The DS1225Y-150IND+ operates over an industrial temperature range, making it suitable for demanding environments where temperature variations are common.

DS1225Y-150IND+ Features

This NVSRAM device offers a parallel interface for fast data access and simple integration into existing architectures. Key features include a 150 ns access time, making it swift enough for high-speed operations and robust enough for industrial applications. Its reliability is further enhanced by an inherent tolerance to harsh operating conditions, contributing to a lower total cost of ownership due to its long operational lifespan and minimal maintenance needs.

DS1225Y-150IND+ Applications

  • Industrial Automation Systems: Utilized for real-time logging and sensitive process control data storage, ensuring data integrity and quick access in environments with variable temperatures and conditions.
  • Medical Equipment: Provides reliable and quick access to critical configuration and patient data in medical devices, where data retention and integrity are paramount.
  • Telecommunications Infrastructure: Acts as a dependable solution for storing configuration data in communication equipment, enabling rapid recovery and initialization during power disruptions.
  • Military and Aerospace: Suitable for use in high-integrity applications such as navigation and communication systems where data must remain secure and intact despite challenging conditions.
  • Energy Management Systems: Essential for fault logging and system status recording in power distribution operations, supporting resilient infrastructure with non-volatile memory capabilities.
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