DMB53D0UV-7
- Mfr.Part #
- DMB53D0UV-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET NMOS+NPN TRANS SOT-563
- Stock
- 42,605
- In Stock :
- 42,605
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Special Purpose
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 12V
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SOT-563, SOT-666
- Voltage - Rated :
- 45V NPN 50V N-Channel
- Current Rating :
- 160mA
- Min Operating Temperature :
- -55°C
- Number of Channels :
- 1
- Published :
- 2011
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain-Min (hFE) :
- 200
- Max Power Dissipation :
- 250mW
- REACH SVHC :
- No SVHC
- Drain to Source Voltage (Vdss) :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Drain to Source Resistance :
- 3.1Ohm
- Continuous Drain Current (ID) :
- 160mA
- Packaging :
- Tape and Reel (TR)
- Weight :
- 3.005049mg
- Number of Pins :
- 6
- Number of Terminations :
- 6
- Mounting Type :
- Surface Mount
- Applications :
- GENERAL PURPOSE
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 6
- Current Rating (Amps) :
- 100mA PNP 160mA N-Channel
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Polarity :
- NPN
- Additional Feature :
- High Reliability
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Terminal Position :
- Dual
- Transistor Type :
- NPN, N-Channel
- Factory Lead Time :
- 12 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Radiation Hardening :
- No
- VCEsat-Max :
- 0.3 V
- Configuration :
- SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE
- Datasheets
- DMB53D0UV-7

DMB53D0UV-7 datasheet pdf and Transistors - Special Purpose product details from Diodes Incorporated stock available at
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