DMB53D0UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Special Purpose

Gate to Source Voltage (Vgs) :

12V

Voltage - Rated :

45V NPN 50V N-Channel

JESD-609 Code :

e3

Max Power Dissipation :

250mW

Terminal Form :

Flat

Max Operating Temperature :

150°C

Configuration :

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

Applications :

GENERAL PURPOSE

Number of Terminations :

6

DC Current Gain-Min (hFE) :

200

Weight :

3.005049mg

Number of Pins :

6

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

160mA

Polarity :

NPN

Transistor Type :

NPN, N-Channel

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

50V

Published :

2011

Additional Feature :

High Reliability

Mount :

Surface Mount

Number of Elements :

1

Min Operating Temperature :

-55°C

Current Rating (Amps) :

100mA PNP 160mA N-Channel

Terminal Finish :

Matte Tin (Sn)

Package / Case :

SOT-563, SOT-666

Drain to Source Resistance :

3.1Ohm

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

VCEsat-Max :

0.3 V

Number of Channels :

1

Continuous Drain Current (ID) :

160mA

Transistor Application :

SWITCHING

Pbfree Code :

yes

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)