DGD2012S8-13

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Mfr.Part #
DGD2012S8-13
Manufacturer
Diodes Incorporated
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
IC GATE DRV HALF-BRIDGE 8SO 2.5K
Stock
5,946
In Stock :
5,946

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Manufacturer :
Diodes Incorporated
Product Category :
Gate Drivers
Operating Temperature :
-40°C~150°C TJ
Channel Type :
Independent
Time@Peak Reflow Temperature-Max (s) :
30
RoHS Status :
ROHS3 Compliant
Number of Drivers :
2
Terminal Finish :
Matte Tin (Sn)
Driven Configuration :
Half-Bridge
Factory Lead Time :
22 Weeks
Packaging :
Tape and Reel (TR)
Voltage - Supply :
10V~20V
Gate Type :
N-Channel MOSFET
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Current - Peak Output (Source, Sink) :
1.9A 2.3A
Input Type :
Non-Inverting
High Side Voltage - Max (Bootstrap) :
200V
Rise / Fall Time (Typ) :
40ns 20ns
Logic Voltage - VIL, VIH :
0.8V 2.5V
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Datasheets
DGD2012S8-13
Introducing Gate Drivers Diodes Incorporated DGD2012S8-13 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, DGD2012S8-13 pinout, DGD2012S8-13 datasheet PDF, DGD2012S8-13 amp .Beyond Gate Drivers Diodes Incorporated DGD2012S8-13 ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DGD2012S8-13


Gate Drivers Diodes Incorporated DGD2012S8-13 Overview

The DGD2012S8-13, manufactured by Diodes Incorporated, is a high-performance gate driver specifically designed for half-bridge power topologies. This component facilitates efficient switching and control of power MOSFETs and IGBTs, ensuring robust operation in demanding environments. Its compact 8SO package makes it ideal for space-constrained applications, while the integration of advanced features enhances system reliability and performance. The use of the Gate Drivers Diodes Incorporated DGD2012S8-13 in your designs can significantly improve power handling capabilities, providing a reliable and economical solution for high-efficiency power conversion systems.

DGD2012S8-13 Features

This gate driver IC includes dual independent drivers with robust output stages, capable of delivering peak currents up to 1.5A. It offers under-voltage lockout for both channels, providing additional protection for connected power devices. The DGD2012S8-13 also features matched propagation delays between channels, which is crucial for high-frequency operation, minimizing the risk of cross-conduction and enhancing overall system efficiency.

DGD2012S8-13 Applications

  • Motor Drive Controllers: Utilizes high peak output current to efficiently drive motors in applications such as electric vehicles and industrial automation, ensuring smooth and precise control.
  • Power Supplies: Supports switching power supplies by driving MOSFETs or IGBTs, enabling efficient power conversion and robust regulation in both consumer and industrial electronics.
  • Solar Inverters: Plays a crucial role in solar power systems, where it drives the power switches of inverters, facilitating efficient conversion of DC to AC, thereby maximizing energy utilization.
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