D45VH10G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Max Power Dissipation :

83W

Frequency :

50MHz

Collector Emitter Voltage (VCEO) :

80V

Weight :

4.535924g

Height :

15.75mm

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

80V

Number of Pins :

3

Pbfree Code :

yes

Max Collector Current :

15A

Surface Mount :

No

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Rated DC :

-80V

hFE Min :

35

Collector Emitter Saturation Voltage :

1.5V

Width :

4.82mm

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

80V

Emitter Base Voltage (VEBO) :

7V

Published :

2005

Number of Terminations :

3

Transition Frequency :

50MHz

Gain Bandwidth Product :

50MHz

Transistor Element Material :

SILICON

Pin Count :

3

Current Rating :

-15A

Transistor Type :

PNP

Mounting Type :

Through Hole

Packaging :

Tube

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1V @ 800mA, 8A

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 1V

Contact Plating :

Tin

Length :

10.28mm

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

6 Weeks

Power Dissipation :

83W