D44C12G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

80V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Max Power Dissipation :

30W

Power Dissipation :

30W

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Max Collector Current :

4A

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

hFE Min :

40

Current - Collector Cutoff (Max) :

100nA

Number of Pins :

3

Collector Base Voltage (VCBO) :

5V

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 1A

Element Configuration :

Single

Collector Emitter Saturation Voltage :

135mV

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

80V

Gain Bandwidth Product :

40MHz

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Voltage - Rated DC :

80V

Published :

2007

Mount :

Through Hole

Polarity/Channel Type :

NPN

RoHS Status :

RoHS Compliant

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-220-3

JESD-609 Code :

e3

Transition Frequency :

40MHz

Current Rating :

4A

Packaging :

Tube

Frequency :

40MHz