CYDMX128A16-65BVXI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Lead Free :

Contains Lead

Pin Count :

100

Nominal Supply Current :

70mA

Terminal Pitch :

0.5mm

Word Size :

16b

Memory Type :

Volatile

Supply Voltage :

1.8V

Length :

6mm

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-40°C~85°C TA

Number of Pins :

100

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Standby Current-Max :

0.000006A

Number of Functions :

1

Mount :

Surface Mount

Memory Format :

SRAM

ECCN Code :

EAR99

JESD-609 Code :

e1

Voltage - Supply :

1.8V~3.3V

Memory Interface :

Parallel

Output Characteristics :

3-STATE

Memory Width :

16

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Access Time (Max) :

65 ns

Height Seated (Max) :

1mm

Factory Lead Time :

8 Weeks

Published :

2011

Density :

128 kb

Radiation Hardening :

No

Address Bus Width :

13b

Power Supplies :

1.8/3V

Number of Ports :

2

Write Cycle Time - Word, Page :

65ns

Number of Terminations :

100

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Base Part Number :

CYDMX

I/O Type :

COMMON

Sync/Async :

ASYNCHRONOUS

Supply Voltage-Min (Vsup) :

1.7V

Memory Size :

128Kb 8K x 16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tray

Organization :

8KX16

Package / Case :

100-VFBGA

Supply Voltage-Max (Vsup) :

1.9V