CYDM256B16-55BVXIT

Manufacturer :

Infineon Technologies

Product Category :

Memory

Package / Case :

100-VFBGA

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Number of Terminations :

100

Operating Temperature :

-40°C~85°C TA

JESD-609 Code :

e1

Mount :

Surface Mount

Word Size :

16b

Nominal Supply Current :

25mA

Time@Peak Reflow Temperature-Max (s) :

30

Memory Size :

256Kb 16K x 16

Terminal Position :

BOTTOM

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

2005

Standby Current-Max :

0.000006A

ECCN Code :

EAR99

Number of Functions :

1

I/O Type :

COMMON

Supply Voltage-Min (Vsup) :

1.7V

Voltage - Supply :

1.7V~1.9V 2.4V~2.6V 3V~3.6V

Mounting Type :

Surface Mount

Output Characteristics :

3-STATE

Supply Voltage-Max (Vsup) :

1.9V

Access Time (Max) :

55 ns

Power Supplies :

1.8/3V

Memory Type :

Volatile

Write Cycle Time - Word, Page :

55ns

Number of Pins :

100

Supply Voltage :

1.8V

Standby Voltage-Min :

1.7V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Height Seated (Max) :

1mm

Memory Width :

16

Memory Interface :

Parallel

Base Part Number :

CYDM

Sync/Async :

ASYNCHRONOUS

Length :

6mm

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Density :

256 kb

Terminal Pitch :

0.5mm

Number of Ports :

2

Operating Supply Voltage :

1.8V

Address Bus Width :

14b

RoHS Status :

ROHS3 Compliant

Memory Format :

SRAM

Lead Free :

Lead Free

Pbfree Code :

yes

Organization :

16KX16