CY7C1911KV18-333BZC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Time@Peak Reflow Temperature-Max (s) :

20

Memory Size :

18Mb 2M x 9

Word Size :

9b

Supply Voltage-Min (Vsup) :

1.7V

Address Bus Width :

19b

Voltage - Supply :

1.7V~1.9V

Terminal Position :

BOTTOM

Memory Width :

9

Radiation Hardening :

No

Package / Case :

165-LBGA

Number of Pins :

165

Number of Terminations :

165

Sync/Async :

SYNCHRONOUS

Clock Frequency :

333MHz

Memory Interface :

Parallel

Memory Type :

Volatile

Length :

15mm

Terminal Pitch :

1mm

Supply Voltage :

1.8V

Operating Supply Voltage :

1.8V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

I/O Type :

Separate

JESD-609 Code :

e0

Mount :

Surface Mount

Pin Count :

165

Standby Voltage-Min :

1.7V

Additional Feature :

PIPELINED ARCHITECTURE

Access Time :

450 ps

Packaging :

Tray

Operating Temperature :

0°C~70°C TA

Memory Format :

SRAM

RoHS Status :

Non-RoHS Compliant

Number of Ports :

2

Output Characteristics :

3-STATE

Base Part Number :

CY7C1911

Number of Functions :

1

Terminal Finish :

Tin/Lead (Sn/Pb)

Supply Voltage-Max (Vsup) :

1.9V

Height Seated (Max) :

1.4mm

Factory Lead Time :

13 Weeks

Nominal Supply Current :

520mA

Mounting Type :

Surface Mount

Density :

18 Mb

Published :

2003

Peak Reflow Temperature (Cel) :

235