CY7C1512KV18-333BZI
- Mfr.Part #
- CY7C1512KV18-333BZI
- Manufacturer
- Infineon Technologies
- Package / Case
- 165-LBGA
- Datasheet
- Download
- Description
- IC SRAM 72MBIT PARALLEL 165FBGA
- Stock
- 33,143
- In Stock :
- 33,143
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Supply Voltage :
- 1.8V
- Published :
- 2003
- Length :
- 15mm
- Density :
- 72 Mb
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Pins :
- 165
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Memory Format :
- SRAM
- Peak Reflow Temperature (Cel) :
- 235
- Operating Supply Voltage :
- 1.8V
- Package / Case :
- 165-LBGA
- Base Part Number :
- CY7C1512
- Terminal Pitch :
- 1mm
- Output Characteristics :
- 3-STATE
- Supply Voltage-Min (Vsup) :
- 1.7V
- Packaging :
- Tray
- Radiation Hardening :
- No
- Organization :
- 4MX18
- Pin Count :
- 165
- Memory Interface :
- Parallel
- Access Time :
- 450 ps
- Additional Feature :
- PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V
- Address Bus Width :
- 21b
- Voltage - Supply :
- 1.7V~1.9V
- Memory Size :
- 72Mb 4M x 18
- I/O Type :
- Separate
- Number of Ports :
- 2
- Operating Temperature :
- -40°C~85°C TA
- Number of Functions :
- 1
- JESD-609 Code :
- e0
- Memory Type :
- Volatile
- Terminal Position :
- BOTTOM
- Memory Width :
- 18
- Height Seated (Max) :
- 1.4mm
- Pbfree Code :
- No
- Supply Voltage-Max (Vsup) :
- 1.9V
- Sync/Async :
- SYNCHRONOUS
- Word Size :
- 18b
- Clock Frequency :
- 333MHz
- Standby Voltage-Min :
- 1.7V
- RoHS Status :
- Non-RoHS Compliant
- Nominal Supply Current :
- 810mA
- Number of Terminations :
- 165
- Datasheets
- CY7C1512KV18-333BZI

Memory Infineon Technologies CY7C1512KV18-333BZI Overview
The Memory Infineon Technologies CY7C1512KV18-333BZI is a high-performance 72Mbit SRAM chip designed by Infineon Technologies, tailored for applications requiring fast access and high data throughput. Encapsulated in a compact 165FBGA package, this SRAM provides a robust parallel interface, ensuring efficient communication and data handling in complex digital systems. Its high-speed functionality makes it an ideal choice for expanding the capabilities of next-generation networking and computing infrastructures, enhancing both system reliability and performance.
CY7C1512KV18-333BZI Features
This SRAM module boasts a range of features designed to meet the demands of advanced digital circuits. Key features include a high data rate of 333 MHz, a parallel interface for rapid data access and transfer, and a low-voltage operation that minimizes power consumption while maintaining performance. Its 165FBGA package is optimized for reduced space usage, making it suitable for densely packed circuit designs.
CY7C1512KV18-333BZI Applications
- High-Speed Networking Equipment: Utilized in routers and switches for buffering data, improving throughput and reducing latency.
- Advanced Computing Systems: Serves as cache memory in servers and high-performance computers to speed up processing and data retrieval times.
- Real-Time Processing Units: Ideal for use in real-time applications such as video processing systems, where rapid data access is crucial.
- Aerospace and Defense: Employs in systems requiring high data integrity and speed, such as satellite communication and onboard avionics.
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