CY7C1270V18-375BZI
- Mfr.Part #
- CY7C1270V18-375BZI
- Manufacturer
- Infineon Technologies
- Package / Case
- 165-LBGA
- Datasheet
- Download
- Description
- IC SRAM 36MBIT PARALLEL 165FBGA
- Stock
- 38,829
- In Stock :
- 38,829
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Voltage - Supply :
- 1.7V~1.9V
- Packaging :
- Tray
- Published :
- 2004
- Width :
- 15mm
- Operating Temperature :
- -40°C~85°C TA
- Pin Count :
- 165
- Supply Voltage :
- 1.8V
- Height Seated (Max) :
- 1.4mm
- Organization :
- 1MX36
- Terminal Pitch :
- 1mm
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Format :
- SRAM
- JESD-609 Code :
- e0
- Additional Feature :
- PIPELINED ARCHITECTURE
- Memory Density :
- 37748736 bit
- Memory Size :
- 36Mb 1M x 36
- Output Characteristics :
- 3-STATE
- Reach Compliance Code :
- not_compliant
- Clock Frequency :
- 375MHz
- Length :
- 17mm
- Qualification Status :
- Not Qualified
- Package / Case :
- 165-LBGA
- Supply Current-Max :
- 1.21mA
- Base Part Number :
- CY7C1270
- Peak Reflow Temperature (Cel) :
- 220
- I/O Type :
- COMMON
- Number of Functions :
- 1
- ECCN Code :
- 3A991.B.2.A
- RoHS Status :
- Non-RoHS Compliant
- JESD-30 Code :
- R-PBGA-B165
- Memory Type :
- Volatile
- Terminal Finish :
- TIN LEAD
- Number of Terminations :
- 165
- Memory Interface :
- Parallel
- Standby Current-Max :
- 0.32A
- Power Supplies :
- 1.5/1.81.8V
- Terminal Position :
- BOTTOM
- Memory Width :
- 36
- Mounting Type :
- Surface Mount
- Supply Voltage-Min (Vsup) :
- 1.7V
- Supply Voltage-Max (Vsup) :
- 1.9V
- HTS Code :
- 8542.32.00.41
- Access Time (Max) :
- 0.45 ns
- Standby Voltage-Min :
- 1.7V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Datasheets
- CY7C1270V18-375BZI

Memory Infineon Technologies CY7C1270V18-375BZI Overview
The Memory Infineon Technologies CY7C1270V18-375BZI is a high-performance SRAM component designed to meet the advanced requirements of modern digital systems. This integrated circuit boasts a significant storage capacity of 36Mbit, delivered through a parallel interface encapsulated in a compact 165FBGA package. Engineered by Infineon Technologies, a leader in semiconductor solutions, this SRAM is optimized for high-speed, reliable performance, making it an ideal choice for applications requiring rapid access to large volumes of data. The integration of this memory module into your systems ensures not only enhanced performance but also superior reliability and stability in demanding operational environments.
CY7C1270V18-375BZI Features
This integrated circuit comes with a robust set of features designed for flexible and reliable performance in complex applications. Key features include a large 36Mbit storage capacity, a fast access speed due to its parallel interface, and the use of advanced 165FBGA packaging technology for improved thermal management and reduced footprint on system boards. Its reliability is further enhanced by Infineon's cutting-edge manufacturing processes, which ensure high durability and operational longevity under various environmental conditions.
CY7C1270V18-375BZI Applications
- Networking Equipment: Utilized in routers and switches, the CY7C1270V18-375BZI helps manage data flow efficiently, ensuring high-speed data access and buffering.
- Telecommunications: In telecom infrastructures, this SRAM is essential for handling large volumes of data transfers and real-time communication processing.
- Automotive Systems: Supports advanced automotive applications such as in-vehicle infotainment systems and driver assistance systems, where rapid data access is crucial.
- Industrial Automation: Plays a key role in automated control systems for real-time processing and machine-to-machine communication in manufacturing environments.
- High-performance Computing: Ideal for applications requiring high-speed, high-volume data handling, such as in servers and data centers.
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