CY62126EV30LL-55BVXE

Manufacturer :

Infineon Technologies

Product Category :

Memory

Base Part Number :

CY62126

Peak Reflow Temperature (Cel) :

260

Memory Size :

1Mb 64K x 16

Write Cycle Time - Word, Page :

55ns

Output Characteristics :

3-STATE

Voltage - Supply :

2.2V~3.6V

Length :

8mm

Number of Ports :

1

Address Bus Width :

16b

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Nominal Supply Current :

35mA

Word Size :

16b

Mounting Type :

Surface Mount

JESD-609 Code :

e1

Package / Case :

48-VFBGA

Pin Count :

48

Packaging :

Tray

Number of Terminations :

48

Radiation Hardening :

No

Supply Voltage-Max (Vsup) :

3.6V

Operating Supply Voltage :

3V

Operating Temperature :

-40°C~125°C TA

Access Time (Max) :

55 ns

ECCN Code :

EAR99

Memory Interface :

Parallel

Sync/Async :

ASYNCHRONOUS

Number of Pins :

48

Density :

1 Mb

Supply Voltage-Min (Vsup) :

2.2V

Factory Lead Time :

8 Weeks

I/O Type :

COMMON

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Series :

MoBL®

Number of Functions :

1

Memory Format :

SRAM

Standby Current-Max :

0.00003A

Supply Voltage :

3V

Memory Width :

16

Terminal Pitch :

0.75mm

Terminal Position :

BOTTOM

Published :

1998

Mount :

Surface Mount

Memory Type :

Volatile