CY14B104N-BA25XCT

Manufacturer :

Infineon Technologies

Product Category :

Memory

Base Part Number :

CY14B104

Surface Mount :

yes

Memory Format :

NVSRAM

Height Seated (Max) :

1.2mm

Memory Type :

Non-Volatile

RoHS Status :

ROHS3 Compliant

Organization :

256KX16

Operating Mode :

ASYNCHRONOUS

Supply Voltage-Max (Vsup) :

3.6V

Supply Voltage-Min (Vsup) :

2.7V

HTS Code :

8542.32.00.41

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Length :

10mm

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e1

Packaging :

Tape and Reel (TR)

Memory Interface :

Parallel

Operating Temperature :

0°C~70°C TA

Memory Width :

16

Terminal Pitch :

0.75mm

Pin Count :

48

Package / Case :

48-TFBGA

Reach Compliance Code :

Unknown

Number of Terminations :

48

Supply Current-Max :

0.065mA

Write Cycle Time - Word, Page :

25ns

Published :

2007

Terminal Position :

BOTTOM

Voltage - Supply :

2.7V~3.6V

JESD-30 Code :

R-PBGA-B48

Mounting Type :

Surface Mount

Power Supplies :

3/3.3V

Supply Voltage :

3V

Memory Size :

4Mb 256K x 16

Standby Current-Max :

0.005A

Width :

6mm

ECCN Code :

3A991.B.2.A

Time@Peak Reflow Temperature-Max (s) :

20

Access Time (Max) :

25 ns

Number of Functions :

1

Memory Density :

4194304 bit