CY10E484-4DC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Operating Mode :

ASYNCHRONOUS

Mounting Type :

Through Hole

Surface Mount :

No

Neg Supply Voltage-Nom :

-5.2 V

Package / Case :

28-CDIP (0.400, 10.16mm)

Memory Density :

16384 bit

Voltage - Supply :

4.94V ~ 5.46V

Access Time :

4 ns

Memory Format :

SRAM

Memory IC Type :

STANDARD SRAM

Memory Type :

Volatile

Organization :

4KX4

Memory Width :

4

Number of Functions :

1

Qualification Status :

COMMERCIAL

Supplier Device Package :

28-CDIP

Base Product Number :

CY10E484

Number of Words :

4096 words

Technology :

SRAM - Asynchronous

Terminal Position :

Dual

Package :

Bulk

Operating Temperature :

0°C ~ 75°C (TA)

JESD-609 Code :

e0

Product Status :

Active

Memory Size :

16Kbit

Pin Count :

28

Terminal Form :

THROUGH-HOLE

Terminal Finish :

TIN LEAD

Parallel/Serial :

Parallel

Reach Compliance Code :

Unknown

Pbfree Code :

No

JESD-30 Code :

R-GDIP-T28

Memory Organization :

4K x 4

Write Cycle Time - Word, Page :

4ns

Manufacturer :

Rochester Electronics LLC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Interface :

Parallel

Number of Terminals :

28

Temperature Grade :

COMMERCIAL EXTENDED

Package Shape :

RECTANGULAR

Series :

-