CPH6122-TL-E
- Mfr.Part #
- CPH6122-TL-E
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A 6CPH
- Stock
- 31,599
- In Stock :
- 31,599
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 2.9mm
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Frequency :
- 400MHz
- Number of Pins :
- 6
- Pin Count :
- 6
- Number of Terminations :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 30V
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Transistor Application :
- SWITCHING
- Width :
- 1.6mm
- Max Collector Current :
- 3A
- Element Configuration :
- Single
- JESD-609 Code :
- e6
- Factory Lead Time :
- 5 Weeks
- Max Power Dissipation :
- 1.3W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -270mV
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Height :
- 900μm
- Transition Frequency :
- 400MHz
- Packaging :
- Tape and Reel (TR)
- Current - Collector (Ic) (Max) :
- 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Contact Plating :
- Tin
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 1.3W
- Operating Temperature :
- 150°C TJ
- Surface Mount :
- yes
- Collector Emitter Voltage (VCEO) :
- 30V
- Polarity/Channel Type :
- PNP
- Published :
- 2012
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- hFE Min :
- 200
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 75mA, 1.5A
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- CPH6122-TL-E

PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
CPH6122-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.The collector emitter saturation voltage is -270mV, which allows for maximum design flexibility.When VCE saturation is 180mV @ 75mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 400MHz.A maximum collector current of 3A volts can be achieved.
CPH6122-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -270mV
the vce saturation(Max) is 180mV @ 75mA, 1.5A
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
CPH6122-TL-E Applications
There are a lot of ON Semiconductor
CPH6122-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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