BUX85G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

50W

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3

Number of Elements :

1

Voltage - Rated DC :

450V

Published :

2006

Contact Plating :

Tin

hFE Min :

30

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Current Rating :

2A

Number of Pins :

3

Length :

10.2616mm

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 100mA 5V

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

450V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Height :

15.748mm

Factory Lead Time :

8 Weeks

Current - Collector Cutoff (Max) :

200μA

Power Dissipation :

50W

JESD-609 Code :

e3

Number of Terminations :

3

Surface Mount :

No

Gain Bandwidth Product :

4MHz

Weight :

4.535924g

Frequency :

4MHz

Collector Base Voltage (VCBO) :

1kV

Polarity/Channel Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Emitter Voltage (VCEO) :

450V

Lead Free :

Lead Free

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Packaging :

Tube

Width :

4.826mm

Element Configuration :

Single

Case Connection :

COLLECTOR

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Transition Frequency :

4MHz

Max Collector Current :

2A