BUX85G

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Mfr.Part #
BUX85G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 2A TO220
Stock
53,233
In Stock :
53,233

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Pin Count :
3
Voltage - Rated DC :
450V
Time@Peak Reflow Temperature-Max (s) :
40
Transition Frequency :
4MHz
Operating Temperature :
-65°C~150°C TJ
Collector Emitter Saturation Voltage :
1V
Element Configuration :
Single
Frequency :
4MHz
Case Connection :
COLLECTOR
Collector Emitter Breakdown Voltage :
450V
Published :
2006
Pbfree Code :
yes
Gain Bandwidth Product :
4MHz
Transistor Application :
SWITCHING
Width :
4.826mm
Contact Plating :
Tin
Vce Saturation (Max) @ Ib, Ic :
1V @ 200mA, 1A
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
JEDEC-95 Code :
TO-220AB
REACH SVHC :
No SVHC
Current Rating :
2A
Collector Base Voltage (VCBO) :
1kV
Max Collector Current :
2A
Length :
10.2616mm
Package / Case :
TO-220-3
Number of Terminations :
3
Power Dissipation :
50W
Height :
15.748mm
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 100mA 5V
Collector Emitter Voltage (VCEO) :
450V
Transistor Element Material :
SILICON
Emitter Base Voltage (VEBO) :
5V
Radiation Hardening :
No
Max Power Dissipation :
50W
Number of Pins :
3
Factory Lead Time :
8 Weeks
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
200μA
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
hFE Min :
30
Number of Elements :
1
Surface Mount :
No
Weight :
4.535924g
Peak Reflow Temperature (Cel) :
260
Packaging :
Tube
Mounting Type :
Through Hole
Polarity/Channel Type :
NPN
Datasheets
BUX85G
Introducing Transistors - Bipolar (BJT) - Single onsemi BUX85G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, BUX85G pinout, BUX85G datasheet PDF, BUX85G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUX85G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUX85G


NPN -65°C~150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUX85G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 2A volts.

BUX85G Features


the DC current gain for this device is 30 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 4MHz


BUX85G Applications


There are a lot of ON Semiconductor
BUX85G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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