BUX85G
- Mfr.Part #
- BUX85G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 2A TO220
- Stock
- 53,233
- In Stock :
- 53,233
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Voltage - Rated DC :
- 450V
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~150°C TJ
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Length :
- 10.2616mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-220-3
- Height :
- 15.748mm
- Power Dissipation :
- 50W
- Surface Mount :
- No
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Width :
- 4.826mm
- Collector Base Voltage (VCBO) :
- 1kV
- Current Rating :
- 2A
- Element Configuration :
- Single
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 4MHz
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 200μA
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Weight :
- 4.535924g
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 1V
- Max Power Dissipation :
- 50W
- Factory Lead Time :
- 8 Weeks
- Transition Frequency :
- 4MHz
- Collector Emitter Breakdown Voltage :
- 450V
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 100mA 5V
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Frequency :
- 4MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 30
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Published :
- 2006
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 450V
- Polarity/Channel Type :
- NPN
- Datasheets
- BUX85G

NPN -65°C~150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUX85G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 2A volts.
BUX85G Features
the DC current gain for this device is 30 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 4MHz
BUX85G Applications
There are a lot of ON Semiconductor
BUX85G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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