BUL805

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Mfr.Part #
BUL805
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 5A TO220
Stock
1,860
In Stock :
1,860

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Current - Collector Cutoff (Max) :
250μA
Max Power Dissipation :
80W
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
450V
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Collector Base Voltage (VCBO) :
800V
Collector Emitter Breakdown Voltage :
450V
Base Part Number :
BUL805
Reach Compliance Code :
not_compliant
Power Dissipation :
80W
Polarity/Channel Type :
NPN
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
800mV @ 600mA, 3A
hFE Min :
10
Element Configuration :
Single
Package / Case :
TO-220-3
JEDEC-95 Code :
TO-220AB
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
NPN
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Operating Temperature :
150°C TJ
Max Collector Current :
5A
Qualification Status :
Not Qualified
Terminal Finish :
Tin (Sn)
Emitter Base Voltage (VEBO) :
9V
Mount :
Through Hole
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 2A 5V
Number of Pins :
3
Datasheets
BUL805
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL805 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BUL805, Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, BUL805 pinout, BUL805 datasheet PDF, BUL805 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL805 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL805


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL805 Overview


In this device, the DC current gain is 10 @ 2A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 600mA, 3A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

BUL805 Features


the DC current gain for this device is 10 @ 2A 5V
the vce saturation(Max) is 800mV @ 600mA, 3A
the emitter base voltage is kept at 9V


BUL805 Applications


There are a lot of STMicroelectronics
BUL805 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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