BUL58D
- Mfr.Part #
- BUL58D
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 8A TO220
- Stock
- 26,952
- In Stock :
- 26,952
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 9V
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 85W
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5A 5V
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 450V
- Additional Feature :
- High Reliability
- Collector Emitter Voltage (VCEO) :
- 450V
- Max Power Dissipation :
- 85W
- hFE Min :
- 5
- VCEsat-Max :
- 2 V
- Max Collector Current :
- 8A
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 1A, 5A
- Height :
- 9.15mm
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Length :
- 10.4mm
- Collector Emitter Breakdown Voltage :
- 450V
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 800V
- Number of Elements :
- 1
- Base Part Number :
- BUL58
- Current - Collector Cutoff (Max) :
- 200μA
- Width :
- 4.6mm
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2V
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- BUL58D

NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL58D Overview
DC current gain in this device equals 5 @ 5A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 1A, 5A.An emitter's base voltage can be kept at 9V to gain high efficiency.Breakdown input voltage is 450V volts.In extreme cases, the collector current can be as low as 8A volts.
BUL58D Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 1A, 5A
the emitter base voltage is kept at 9V
BUL58D Applications
There are a lot of STMicroelectronics
BUL58D applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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