BUL58D

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

85W

Number of Elements :

1

Collector Emitter Saturation Voltage :

2V

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

9V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

450V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Contact Plating :

Tin

VCEsat-Max :

2 V

Length :

10.4mm

Collector Emitter Voltage (VCEO) :

450V

Radiation Hardening :

No

Max Power Dissipation :

85W

Max Breakdown Voltage :

450V

Max Collector Current :

8A

Packaging :

Tube

Operating Temperature :

150°C TJ

Width :

4.6mm

Transistor Application :

SWITCHING

Pin Count :

3

Mounting Type :

Through Hole

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Package / Case :

TO-220-3

Additional Feature :

High Reliability

hFE Min :

5

Height :

9.15mm

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 5A 5V

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

200μA

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

800V

Base Part Number :

BUL58

Vce Saturation (Max) @ Ib, Ic :

2V @ 1A, 5A