BUL58D

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

450V

Packaging :

Tube

Number of Terminations :

3

Mount :

Through Hole

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Width :

4.6mm

Radiation Hardening :

No

ECCN Code :

EAR99

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

200μA

Max Breakdown Voltage :

450V

Pin Count :

3

Emitter Base Voltage (VEBO) :

9V

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

VCEsat-Max :

2 V

Lead Free :

Lead Free

Max Power Dissipation :

85W

Additional Feature :

High Reliability

hFE Min :

5

Power Dissipation :

85W

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

800V

Vce Saturation (Max) @ Ib, Ic :

2V @ 1A, 5A

Number of Pins :

3

Base Part Number :

BUL58

Factory Lead Time :

8 Weeks

Max Collector Current :

8A

Length :

10.4mm

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

450V

Package / Case :

TO-220-3

Contact Plating :

Tin

Number of Elements :

1

REACH SVHC :

No SVHC

Element Configuration :

Single

Collector Emitter Saturation Voltage :

2V

Operating Temperature :

150°C TJ

Height :

9.15mm

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 5A 5V