BUL58D

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Mfr.Part #
BUL58D
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 8A TO220
Stock
26,952
In Stock :
26,952

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
9V
JESD-609 Code :
e3
Pin Count :
3
Element Configuration :
Single
Package / Case :
TO-220-3
Length :
10.4mm
Transistor Application :
SWITCHING
VCEsat-Max :
2 V
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 5A 5V
Width :
4.6mm
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Operating Temperature :
150°C TJ
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Base Part Number :
BUL58
Factory Lead Time :
8 Weeks
Collector Base Voltage (VCBO) :
800V
Packaging :
Tube
Additional Feature :
High Reliability
Power Dissipation :
85W
hFE Min :
5
Collector Emitter Breakdown Voltage :
450V
Max Power Dissipation :
85W
Lead Free :
Lead Free
Mounting Type :
Through Hole
Number of Elements :
1
Collector Emitter Saturation Voltage :
2V
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
450V
Vce Saturation (Max) @ Ib, Ic :
2V @ 1A, 5A
Number of Pins :
3
Max Collector Current :
8A
Mount :
Through Hole
JEDEC-95 Code :
TO-220AB
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Max Breakdown Voltage :
450V
Contact Plating :
Tin
Height :
9.15mm
Current - Collector Cutoff (Max) :
200μA
Datasheets
BUL58D
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL58D from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:150°C TJ, Base Part Number:BUL58, Mounting Type:Through Hole, Number of Pins:3, BUL58D pinout, BUL58D datasheet PDF, BUL58D amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL58D ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL58D


NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL58D Overview


DC current gain in this device equals 5 @ 5A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 1A, 5A.An emitter's base voltage can be kept at 9V to gain high efficiency.Breakdown input voltage is 450V volts.In extreme cases, the collector current can be as low as 8A volts.

BUL58D Features


the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 1A, 5A
the emitter base voltage is kept at 9V


BUL58D Applications


There are a lot of STMicroelectronics
BUL58D applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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