BUL216
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- Mfr.Part #
- BUL216
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 4A TO220
- Stock
- 147
- In Stock ：
- 147
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 12
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 800V
- Weight :
- 90.718474mg
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 1V
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 90W
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 660mA, 2A
- Pin Count :
- 3
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Current Rating :
- 4A
- VCEsat-Max :
- 3 V
- Turn Off Time-Max (toff) :
- 4020ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 400mA 5V
- Height :
- 9.15mm
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Length :
- 10.4mm
- Max Collector Current :
- 4A
- Max Power Dissipation :
- 90W
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 1.6kV
- Collector Emitter Voltage (VCEO) :
- 800V
- Emitter Base Voltage (VEBO) :
- 9V
- Current - Collector Cutoff (Max) :
- 250μA
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Base Part Number :
- BUL216
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Width :
- 4.6mm
- Packaging :
- Tube
- Voltage - Rated DC :
- 800V
- Datasheets
- BUL216
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL216 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 400mA 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 660mA, 2A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.Collector current can be as low as 4A volts at its maximum.
BUL216 Features
the DC current gain for this device is 12 @ 400mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 660mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
BUL216 Applications
There are a lot of STMicroelectronics
BUL216 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUL213 | STMicroelectronics | 11,724 | TRANS NPN 600V 3A TO220 |
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