BUL216
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- Mfr.Part #
- BUL216
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 4A TO220
- Stock
- 147
- In Stock ：
- 147
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.6mm
- Transistor Element Material :
- SILICON
- Base Part Number :
- BUL216
- Voltage - Rated DC :
- 800V
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Height :
- 9.15mm
- Length :
- 10.4mm
- Collector Base Voltage (VCBO) :
- 1.6kV
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 660mA, 2A
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Type :
- NPN
- hFE Min :
- 12
- Max Power Dissipation :
- 90W
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Weight :
- 90.718474mg
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 800V
- Max Collector Current :
- 4A
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Pin Count :
- 3
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 250μA
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 800V
- Current Rating :
- 4A
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 400mA 5V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 9V
- VCEsat-Max :
- 3 V
- Power Dissipation :
- 90W
- ECCN Code :
- EAR99
- Turn Off Time-Max (toff) :
- 4020ns
- Datasheets
- BUL216
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL216 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 400mA 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 660mA, 2A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.Collector current can be as low as 4A volts at its maximum.
BUL216 Features
the DC current gain for this device is 12 @ 400mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 660mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
BUL216 Applications
There are a lot of STMicroelectronics
BUL216 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUL213 | STMicroelectronics | 11,724 | TRANS NPN 600V 3A TO220 |
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