BUL216
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- Mfr.Part #
- BUL216
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 4A TO220
- Stock
- 147
- In Stock ：
- 147
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 12
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 800V
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1V
- Current - Collector Cutoff (Max) :
- 250μA
- Collector Emitter Voltage (VCEO) :
- 800V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Current Rating :
- 4A
- Turn Off Time-Max (toff) :
- 4020ns
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Width :
- 4.6mm
- Power Dissipation :
- 90W
- JEDEC-95 Code :
- TO-220AB
- Transistor Type :
- NPN
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- VCEsat-Max :
- 3 V
- Radiation Hardening :
- No
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 9V
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 1.6kV
- Weight :
- 90.718474mg
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Voltage - Rated DC :
- 800V
- Max Collector Current :
- 4A
- Base Part Number :
- BUL216
- Length :
- 10.4mm
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Height :
- 9.15mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 400mA 5V
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 90W
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 660mA, 2A
- Datasheets
- BUL216
BUL216 Documents
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL216 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 400mA 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 660mA, 2A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.Collector current can be as low as 4A volts at its maximum.
BUL216 Features
the DC current gain for this device is 12 @ 400mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 660mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
BUL216 Applications
There are a lot of STMicroelectronics
BUL216 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUL213 | STMicroelectronics | 11,724 | TRANS NPN 600V 3A TO220 |
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