BUK9Y113-100E115
- Mfr.Part #
- BUK9Y113-100E115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- NOW NEXPERIA BUK9Y113-100E 12A,
- Stock
- 31,206
- In Stock :
- 31,206
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- JEDEC-95 Code :
- MO-235
- Rise Time :
- 10.8ns
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 12 Weeks
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Max Dual Supply Voltage :
- 100V
- Package / Case :
- SC-100, SOT-669
- Vgs (Max) :
- ±10V
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Published :
- 2013
- Continuous Drain Current (ID) :
- 12A
- Pin Count :
- 4
- Reach Compliance Code :
- not_compliant
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 5A, 10V
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Additional Feature :
- AVALANCHE RATED
- Turn On Delay Time :
- 6.2 ns
- Number of Pins :
- 4
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 12.4 ns
- Power Dissipation-Max :
- 45W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 5V
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 9.3 ns
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 15V
- Datasheets
- BUK9Y113-100E115
Specialized ICs NXP Semiconductors BUK9Y113-100E,115 Overview
The Specialized ICs NXP Semiconductors BUK9Y113-100E,115 is an advanced power MOSFET designed primarily for high-efficiency, high-speed switching applications. This device is encapsulated in a compact SC-100, SOT-669 package, making it ideal for space-constrained environments. Featuring a low on-resistance of 110m Ω at 5A and 10V, it ensures minimal power loss and heat generation, enhancing overall system reliability. The MOSFET operates with a maximum gate-source voltage of ±10V and exhibits significant durability with a drain-source voltage of up to 100V. With gate charges as low as 8.4nC at 5V, this MOSFET enables fast switching, beneficial for high-frequency applications.
Key Features
The BUK9Y113-100E,115 comes packed with several key features:
- Continuous drain current (ID) capability of 12A, facilitating robust performance for high-power applications.
- On-resistance of only 110m Ω at 5A and 10V, providing excellent efficiency and reducing thermal footprint.
- Low gate charge of 8.4nC at 5V, which enhances the switching speed and reduces switching losses.
- High drain-source voltage of 100V, ensuring operation stability under various conditions.
- Capacitance of 870pF at 25V, optimal for handling high-speed signal processing.
- Minimal turn-off delay time of 12.4 ns, contributing to improved responsiveness and efficiency in switching operations.
Applications
The versatility of the Specialized ICs NXP Semiconductors BUK9Y113-100E,115 MOSFET makes it suitable for a wide range of applications, including:
- Power Tools – enhances operational efficiency and battery life.
- Motor Drives and Uninterruptible Power Supplies – ensures reliable and continuous power supply.
- Synchronous Rectification – improves efficiency in AC to DC conversion.
- Battery Protection Circuits – safeguards against overcharging and deep discharge.
- Telecom and Server Power Supplies – provides stable and efficient power in critical communication infrastructures.
- Industrial Power Supplies – supports robust industrial applications with high reliability.
- PFC Stages and various PWM Stages – optimizes performance in power factor correction and pulse width modulation processes.
- DC-to-DC Converters – crucial for converting and regulating different DC voltages across modern electronic devices.
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