BUK9M85-60E

Manufacturer :

Nexperia

Product Category :

Specialized ICs

DS Breakdown Voltage-Min :

60V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Reference Standard :

AEC-Q101; IEC-60134

JESD-30 Code :

R-PSSO-G4

Avalanche Energy Rating (Eas) :

4.55 mJ

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-1210, 8-LFPAK33

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Rds On (Max) @ Id, Vgs :

73m Ω @ 5A, 10V

Continuous Drain Current (ID) :

12.8A

Pulsed Drain Current-Max (IDM) :

51A

Input Capacitance (Ciss) (Max) @ Vds :

434pF @ 25V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.085Ohm

Current - Continuous Drain (Id) @ 25°C :

12.8A Tc

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

Automotive, AEC-Q101, TrenchMOS™

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±10V

Factory Lead Time :

26 Weeks

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Form :

Gull wing

Power Dissipation-Max :

31W Tc

Published :

2016

Number of Terminations :

4

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

4.4nC @ 5V

Pin Count :

8