BUK9K89-100E115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

3.6 ns

Published :

2013

Fall Time (Typ) :

12.1 ns

Gate to Source Voltage (Vgs) :

10V

Max Dual Supply Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Rise Time :

5.8ns

Input Capacitance (Ciss) (Max) @ Vds :

1108pF @ 25V

Additional Feature :

AVALANCHE RATED

Surface Mount :

yes

Package / Case :

SOT-1205, 8-LFPAK56

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

22.1 ns

Pin Count :

8

Reference Standard :

AEC-Q101; IEC-60134

Number of Elements :

2

JESD-30 Code :

R-PDSO-G6

Continuous Drain Current (ID) :

12.5A

Max Power Dissipation :

38W

Contact Plating :

Tin

Mounting Type :

Surface Mount

Element Configuration :

Dual

JESD-609 Code :

e3

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Channels :

2

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Terminal Form :

Gull wing

Number of Pins :

8

Factory Lead Time :

12 Weeks

FET Feature :

Logic Level Gate

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

85m Ω @ 5A, 10V

Number of Terminations :

6

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

16.8nC @ 10V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

50A

Power Dissipation :

38W