BUK9K45-100E115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

42m Ω @ 5A, 10V

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Package / Case :

SOT-1205, 8-LFPAK56

Mounting Type :

Surface Mount

Turn On Delay Time :

4 ns

Continuous Drain Current (ID) :

21A

Max Power Dissipation :

53W

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Published :

2013

Number of Pins :

8

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

2

Number of Channels :

2

JESD-30 Code :

R-PDSO-G6

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Surface Mount :

yes

Max Dual Supply Voltage :

100V

Turn-Off Delay Time :

41.34 ns

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Drain to Source Breakdown Voltage :

100V

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

27.75 ns

FET Feature :

Logic Level Gate

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

33.5nC @ 10V

Number of Terminations :

6

Rise Time :

8.47ns

Series :

Automotive, AEC-Q101, TrenchMOS™

Reference Standard :

AEC-Q101; IEC-60134

Pin Count :

8

Drain-source On Resistance-Max :

0.045Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2152pF @ 25V

Gate to Source Voltage (Vgs) :

10V

Power Dissipation :

53W

Transistor Element Material :

SILICON