BUK9907-40ATC,127
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- Mfr.Part #
- BUK9907-40ATC,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-5
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 75A TO220AB
- Stock
- 38,666
- In Stock ：
- 38,666
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Case Connection :
- DRAIN
- Number of Terminations :
- 5
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Contact Plating :
- Tin
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 50A, 10V
- Fall Time (Typ) :
- 11 μs
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 12 Weeks
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Power Dissipation-Max :
- 272W Tc
- Turn On Delay Time :
- 3 μs
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 140A
- Pin Count :
- 5
- Number of Elements :
- 1
- Vgs (Max) :
- ±15V
- Element Configuration :
- Single
- Rise Time :
- 10μs
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Feature :
- Temperature Sensing Diode
- Drain to Source Breakdown Voltage :
- 40V
- Published :
- 2008
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Max Dual Supply Voltage :
- 40V
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5836pF @ 25V
- Avalanche Energy Rating (Eas) :
- 1400 mJ
- Drain-source On Resistance-Max :
- 0.0077Ohm
- Power Dissipation :
- 272W
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 15V
- Radiation Hardening :
- No
- Number of Pins :
- 5
- Turn-Off Delay Time :
- 17 µs
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-220-5
- Datasheets
- BUK9907-40ATC,127
N-Channel Tube 6.5m Ω @ 50A, 10V ±15V 5836pF @ 25V TO-220-5
BUK9907-40ATC,127 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5836pF @ 25V.This device conducts a continuous drain current (ID) of 140A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 17 μs occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3 μs.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 15V.With 40V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
BUK9907-40ATC,127 Features
the avalanche energy rating (Eas) is 1400 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 17 μs
BUK9907-40ATC,127 Applications
There are a lot of Nexperia USA Inc.
BUK9907-40ATC,127 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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