BUK9640-100A118
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- Mfr.Part #
- BUK9640-100A118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- NOW NEXPERIA BUK9640-100A - POWE
- Stock
- 40,939
- In Stock ：
- 40,939
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Max Dual Supply Voltage :
- 100V
- Gate to Source Voltage (Vgs) :
- 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 5V
- Current - Continuous Drain (Id) @ 25°C :
- 39A Tc
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 125 ns
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 158W Tc
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Breakdown Voltage :
- 100V
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 3072pF @ 25V
- Turn On Delay Time :
- 20 ns
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Rise Time :
- 135ns
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 25A, 10V
- Number of Terminations :
- 2
- Published :
- 2014
- Vgs (Max) :
- ±15V
- Fall Time (Typ) :
- 90 ns
- Factory Lead Time :
- 12 Weeks
- Power Dissipation :
- 158W
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 39A
- Lead Free :
- Lead Free
- Datasheets
- BUK9640-100A118
Specialized ICs NXP Semiconductors BUK9640-100A,118 Overview
The Specialized ICs NXP Semiconductors BUK9640-100A,118 is an advanced power MOSFET designed for high-efficiency applications. Featuring a low on-resistance of only 39m Ω at 25A, 10V, this component ensures minimal power loss and superior thermal management, making it an ideal choice for power-intensive applications. The device supports a maximum drain-source voltage of 100V, providing robust performance under high voltage conditions. Additionally, its maximum gate-source voltage is ±15V, accommodating a wide range of drive signals. The power MOSFET is packaged in a TO-263-3, D2Pak, which offers excellent power dissipation and space efficiency. With an input capacitance of 3072pF at 25V and a total gate charge of 48nC at 5V, it is optimized for fast switching and responsive operation in power conversion applications.
Key Features
Continuous drain current (ID) of 39A, enabling substantial power handling capability.
Drain-to-source breakdown voltage of 100V, suitable for high-voltage applications.
Turn-off delay time of 125 ns and turn-on delay time of 20 ns, for rapid switching operations.
Gate-source voltage (VGS) of ±15V, allowing flexible gate driving strategies.
Input capacitance of 3072pF at 25V and total gate charge of 48nC at 5V, designed for efficient gate control and fast response times.
Applications
The Specialized ICs NXP Semiconductors BUK9640-100A,118 is extensively used in various applications, emphasizing its versatility and reliability. Key applications include:
- LCD/LED TV power supplies, where efficiency and reliability are paramount.
- Consumer appliances that require robust power management solutions.
- Lighting systems, particularly in high power LED drivers.
- Uninterruptible power supplies (UPS) and AC-DC power supplies, ensuring power continuity and stability.
- Synchronous rectification in ATX 1 Server, Telecom PSU.
- Motor drives and UPS systems, where high current and fast switching are necessary.
- Micro solar inverters, enabling efficient solar energy conversion.
- DC/DC converters for electronic devices, providing stable and efficient voltage conversion.
- Power tools requiring durable and efficient power management.
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