BUK9620-100B,118
- Mfr.Part #
- BUK9620-100B,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 63A D2PAK
- Stock
- 971
- In Stock :
- 971
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Turn-Off Delay Time :
- 173 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 53.4nC @ 5V
- Fall Time (Typ) :
- 77 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Reach Compliance Code :
- not_compliant
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 63A Tc
- Gate to Source Voltage (Vgs) :
- 15V
- Vgs (Max) :
- ±15V
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 63A
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 18.5m Ω @ 25A, 10V
- Avalanche Energy Rating (Eas) :
- 222 mJ
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 5657pF @ 25V
- Turn On Delay Time :
- 45 ns
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Drain to Source Breakdown Voltage :
- 100V
- Power Dissipation-Max :
- 203W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Contact Plating :
- Tin
- Rise Time :
- 116ns
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 203W
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 12 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Max Dual Supply Voltage :
- 100V
- Number of Elements :
- 1
- Datasheets
- BUK9620-100B,118
N-Channel Tape & Reel (TR) 18.5m Ω @ 25A, 10V ±15V 5657pF @ 25V 53.4nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9620-100B,118 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 222 mJ.The maximum input capacitance of this device is 5657pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 63A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 173 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 45 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 100V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
BUK9620-100B,118 Features
the avalanche energy rating (Eas) is 222 mJ
a continuous drain current (ID) of 63A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 173 ns
BUK9620-100B,118 Applications
There are a lot of Nexperia USA Inc.
BUK9620-100B,118 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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