BUK9610-100B,118
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- Mfr.Part #
- BUK9610-100B,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A D2PAK
- Stock
- 12,658
- In Stock ：
- 12,658
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Avalanche Energy Rating (Eas) :
- 629 mJ
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Contact Plating :
- Tin
- FET Type :
- N-Channel
- Turn On Delay Time :
- 60 ns
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Power Dissipation-Max :
- 300W Tc
- Drain Current-Max (Abs) (ID) :
- 75A
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Factory Lead Time :
- 12 Weeks
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 94 ns
- Vgs (Max) :
- ±15V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 11045pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 110ns
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Max Dual Supply Voltage :
- 100V
- Resistance :
- 9.7mOhm
- Rds On (Max) @ Id, Vgs :
- 9.7m Ω @ 25A, 10V
- Power Dissipation :
- 300W
- Drain to Source Breakdown Voltage :
- 100V
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 5V
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 15V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2011
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Turn-Off Delay Time :
- 250 ns
- Continuous Drain Current (ID) :
- 110A
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Datasheets
- BUK9610-100B,118
N-Channel Tape & Reel (TR) 9.7m Ω @ 25A, 10V ±15V 11045pF @ 25V 86nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9610-100B,118 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 629 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11045pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 110A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.A device can conduct a maximum continuous current of [75A] according to its drain current.It is [250 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 60 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 15V.As it is powered by 100V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
BUK9610-100B,118 Features
the avalanche energy rating (Eas) is 629 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 250 ns
BUK9610-100B,118 Applications
There are a lot of Nexperia USA Inc.
BUK9610-100B,118 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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