BUK9607-30B,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

DS Breakdown Voltage-Min :

30V

Avalanche Energy Rating (Eas) :

327 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3373pF @ 25V

Drain-source On Resistance-Max :

0.007Ohm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Factory Lead Time :

16 Weeks

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

HTS Code :

8541.29.00.75

Drain Current-Max (Abs) (ID) :

108A

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Published :

2011

Terminal Position :

Single

Vgs (Max) :

±15V

Power Dissipation-Max :

157W Tc

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

FET Type :

N-Channel

Terminal Form :

Gull wing

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 1mA

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

435A

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V