BUK9507-30B,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.009Ohm

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

98 ns

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

Radiation Hardening :

No

Element Configuration :

Single

Number of Pins :

3

Power Dissipation :

157W

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3373pF @ 25V

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

3

Transistor Element Material :

SILICON

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Rise Time :

135ns

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

15V

Drain Current-Max (Abs) (ID) :

75A

Vgs (Max) :

±15V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 1mA

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Turn-Off Delay Time :

99 ns

Series :

TrenchMOS™

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

90mA

Packaging :

Tube

Number of Elements :

1

Turn On Delay Time :

30 ns

Package / Case :

TO-220-3

Max Dual Supply Voltage :

30V

HTS Code :

8541.29.00.75

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Power Dissipation-Max :

157W Tc