BUK9506-40B,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation :

203W

Surface Mount :

No

ECCN Code :

EAR99

Vgs (Max) :

±15V

Max Dual Supply Voltage :

40V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4901pF @ 25V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

40V

Gate to Source Voltage (Vgs) :

15V

Drain-source On Resistance-Max :

0.0071Ohm

Continuous Drain Current (ID) :

129A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Published :

2010

Fall Time (Typ) :

92 ns

Power Dissipation-Max :

203W Tc

HTS Code :

8541.29.00.75

Turn-Off Delay Time :

132 ns

Pulsed Drain Current-Max (IDM) :

516A

Pin Count :

3

Avalanche Energy Rating (Eas) :

494 mJ

Radiation Hardening :

No

Packaging :

Tube

Rise Time :

145ns

Drain Current-Max (Abs) (ID) :

75A

Turn On Delay Time :

43 ns

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Contact Plating :

Tin

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

Mounting Type :

Through Hole

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Series :

TrenchMOS™

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 5V