BUK9275-100A,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

100V

Series :

Automotive, AEC-Q101, TrenchMOS™

Max Dual Supply Voltage :

100V

Continuous Drain Current (ID) :

21.7A

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Lead Free :

Lead Free

FET Type :

N-Channel

Factory Lead Time :

26 Weeks

Rise Time :

120ns

Pulsed Drain Current-Max (IDM) :

87A

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 1mA

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.084Ohm

Terminal Form :

Gull wing

Radiation Hardening :

No

Contact Plating :

Tin

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

72m Ω @ 10A, 10V

Turn-Off Delay Time :

58 ns

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Power Dissipation-Max :

88W Tc

Number of Terminations :

2

Power Dissipation :

88W

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Vgs (Max) :

±10V

Published :

2010

Number of Pins :

3

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

21.7A Tc

Fall Time (Typ) :

57 ns

Turn On Delay Time :

13 ns