BUK9219-55A118
- Mfr.Part #
- BUK9219-55A118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- NOW NEXPERIA BUK9219-55A - POWER
- Stock
- 13,850
- In Stock :
- 13,850
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation :
- 114W
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.02Ohm
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 130 ns
- Vgs (Max) :
- ±10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 55V
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 45 ns
- Gate to Source Voltage (Vgs) :
- 10V
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Max Dual Supply Voltage :
- 55V
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Continuous Drain Current (ID) :
- 55A
- Avalanche Energy Rating (Eas) :
- 120 mJ
- Rise Time :
- 130ns
- Terminal Position :
- Single
- HTS Code :
- 8541.29.00.75
- Power Dissipation-Max :
- 114W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2920pF @ 25V
- Terminal Form :
- Gull wing
- Published :
- 2010
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pulsed Drain Current-Max (IDM) :
- 219A
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 17.6m Ω @ 25A, 10V
- Factory Lead Time :
- 26 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 400 ns
- Surface Mount :
- yes
- Datasheets
- BUK9219-55A118
Specialized ICs NXP Semiconductors BUK9219-55A,118 Overview
The Specialized ICs NXP Semiconductors BUK9219-55A,118 is a high-performance, N-Channel MOSFET designed for efficient power management in a compact TO-252-3, DPAK package. This device offers excellent thermal performance and high reliability, crucial for today's advanced electronic circuits. With a drain-to-source breakdown voltage of 55V, and a continuous drain current of 25A, it is well-suited for demanding applications. The MOSFET features an extremely low on-resistance of 17.6m Ω at 10V, enhancing its efficiency in high current scenarios. Additionally, its maximum input capacitance of 2920pF at 25V allows for rapid switching and better signal integrity. This component's robust design includes a peak drain current capacity of 219A, which makes it ideal for high-intensity pulses, while ensuring stability and prolonged operational life.
Key Features
- Avalanche energy rating (Eas) of 120 mJ
- Continuous drain current (ID) of 25A, with a peak of 219A
- Drain-to-source breakdown voltage of 55V
- Very low on-resistance of 17.6m Ω at 10V
- Turn-off delay time of 400 ns
- Maximum input capacitance of 2920pF at 25V
Applications
The Specialized ICs NXP Semiconductors BUK9219-55A,118 MOSFET is versatile and can be used in a variety of applications, including:
- DC/DC converters
- Power tools
- Motor drives and uninterruptible power supplies
- Synchronous rectification
- Battery protection circuits
- Telecom server power supplies
- Industrial power supplies
- PFC stages, hard switching PWM stages, and resonant switching
- PWM stages for applications such as PC Silverbox, adapters, LCD & PDP TVs
- Lighting, server, telecom, and UPS applications
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