BU900TP

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Mfr.Part #
BU900TP
Manufacturer
STMicroelectronics
Package / Case
SOT-82
Datasheet
Download
Description
TRANS NPN 370V 5A SOT82-3
Stock
8,357
In Stock :
8,357

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
4V @ 3mA, 3A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
55W
Max Collector Current :
5A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
NPN - Trilinton, Zener Clamp
DC Current Gain (hFE) (Min) @ Ic, Vce :
7000 @ 1A 5V
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
13V
Qualification Status :
Not Qualified
Reach Compliance Code :
Unknown
Power - Max :
55W
Collector Emitter Breakdown Voltage :
370V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Part Number :
BU900
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
hFE Min :
7000
Polarity :
NPN
Mounting Type :
Through Hole
Number of Pins :
3
Number of Elements :
1
Package / Case :
SOT-82
Packaging :
Tube
Current - Collector Cutoff (Max) :
100μA
Collector Emitter Voltage (VCEO) :
4V
Pin Count :
3
Terminal Position :
Single
Operating Temperature :
150°C TJ
Datasheets
BU900TP
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BU900TP from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BU900, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Package / Case:SOT-82, Operating Temperature:150°C TJ, BU900TP pinout, BU900TP datasheet PDF, BU900TP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BU900TP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BU900TP


NPN - Trilinton, Zener Clamp 150°C TJ 100μA 1 Elements 3 Terminations SILICON SOT-82 Tube Through Hole

BU900TP Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 7000 @ 1A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 3mA, 3A.The emitter base voltage can be kept at 13V for high efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

BU900TP Features


the DC current gain for this device is 7000 @ 1A 5V
the vce saturation(Max) is 4V @ 3mA, 3A
the emitter base voltage is kept at 13V


BU900TP Applications


There are a lot of STMicroelectronics
BU900TP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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