BU808DFI

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

JEDEC-95 Code :

TO-218

Max Power Dissipation :

52W

Current Rating :

8A

Collector Emitter Breakdown Voltage :

700V

VCEsat-Max :

1.6 V

Lead Free :

Lead Free

HTS Code :

8541.29.00.95

Max Collector Current :

8A

Number of Elements :

1

Transistor Type :

NPN - Darlington

Number of Pins :

3

Pin Count :

3

Case Connection :

Isolated

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5A 5V

Power Dissipation :

52W

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 500mA, 5A

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

700V

Element Configuration :

Single

Package / Case :

ISOWATT-218-3

Packaging :

Tube

Mount :

Through Hole

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

700V

Current - Collector Cutoff (Max) :

400μA

Base Part Number :

BU808

Continuous Collector Current :

8A

Mounting Type :

Through Hole

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

1.4kV