BST82235

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Published :

1997

Surface Mount :

yes

Series :

TrenchMOS™

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

830mW Tc

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

5V

Number of Terminations :

3

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Drain to Source Breakdown Voltage :

100V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Number of Pins :

3

Feedback Cap-Max (Crss) :

6 pF

Operating Temperature :

150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Number of Elements :

1

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10 Ω @ 150mA, 5V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 1mA

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

0.175A

Max Dual Supply Voltage :

100V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Position :

Dual

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

190mA

HTS Code :

8541.21.00.95

Power Dissipation :

830mW