BST39TA
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- Mfr.Part #
- BST39TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A SOT89-3
- Stock
- 34,502
- In Stock ：
- 34,502
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-243AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- hFE Min :
- 40
- REACH SVHC :
- No SVHC
- Qualification Status :
- Not Qualified
- Base Part Number :
- BST39
- Weight :
- 51.993025mg
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 350V
- Continuous Collector Current :
- 500mA
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 350V
- Width :
- 2.5mm
- Collector Emitter Breakdown Voltage :
- 350V
- Transition Frequency :
- 70MHz
- Number of Pins :
- 4
- Gain Bandwidth Product :
- 70MHz
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- Flat
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 350V
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Length :
- 4.5mm
- Height :
- 1.5mm
- JESD-30 Code :
- R-PSSO-F3
- Collector Base Voltage (VCBO) :
- 400V
- Current Rating :
- 500mA
- Contact Plating :
- Tin
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 1W
- Published :
- 2000
- Lead Free :
- Lead Free
- Frequency :
- 70MHz
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Mount :
- Surface Mount
- Max Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Datasheets
- BST39TA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Cut Tape (CT) Surface Mount
BST39TA Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 50mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BST39TA Features
the DC current gain for this device is 40 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz
BST39TA Applications
There are a lot of Diodes Incorporated
BST39TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BST39,115 | Diodes Incorporated | 75,002 | TRANS NPN 350V 0.1A SOT89 |
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