BSR41,115
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- Mfr.Part #
- BSR41,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- NEXPERIA BSR41 - POWER BIPOLAR T
- Stock
- 93,254
- In Stock ：
- 93,254
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.35W
- Base Part Number :
- BSR41
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 4
- JESD-30 Code :
- R-PSSO-F3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Published :
- 2009
- Power Dissipation :
- 1.35W
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Package / Case :
- TO-243AA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Flat
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1A
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 70V
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Datasheets
- BSR41,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BSR41,115 Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BSR41,115 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BSR41,115 Applications
There are a lot of Nexperia USA Inc.
BSR41,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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